Voltage controlled oscillator

Abstract

A semiconductor device includes a semiconductor substrate having an element region on a surface thereof, an active element being formed in the element region. An insulating layer is formed on the semiconductor substrate and covers the active element. An inductor is formed on the insulating layer and overlaps with the active element.

1 . A semiconductor device, comprising:
 a semiconductor substrate having an element region on a surface thereof, an active element being formed in said element region;   an insulating layer formed on said semiconductor substrate and covering said active element; and   an inductor formed on said insulating layer and overlapping with said active element.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein:
 said inductor comprises a voltage controlled oscillator, and   said active element is electrically connected to said inductor and comprises at least one of a varactor and a MOSFET.   
   
   
       3 . The semiconductor device according to  claim 1 , wherein said active element comprises one of a varactor and a MOSFET. 
   
   
       4 . A semiconductor device, comprising:
 a semiconductor substrate having an element region on a surface thereof, an active element being formed in said element region;   an insulating layer formed on said semiconductor substrate and covering said active element; and   an inductor formed on said insulating layer,   wherein said active element is directly underlying said inductor.   
   
   
       5 . The semiconductor device according to  claim 4 , wherein:
 said inductor comprises a voltage controlled oscillator, and   said active element is electrically connected to said inductor and comprises at least one of a varactor and a MOSFET.   
   
   
       6 . The semiconductor device according to  claim 4 , wherein said active element comprises one of a varactor and a MOSFET.