Light emitting device and method for manufacturing the same

Abstract

Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.

1 . A light emitting device, comprising:
 an n-type nitride semiconductor layer;   an active layer on the n-type nitride semiconductor layer;   an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer; and   a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure,   wherein at least one of the AlN layer and the GaN layer is doped with a p-type dopant.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the p-type nitride semiconductor layer is a p-GaN layer. 
     
     
         3 . The light emitting device according to  claim 1 , wherein the AlN/GaN layer of the super lattice structure has an identical amount of p-type dopant in each pair of AlN layer and GaN layer alternately grown on the active layer. 
     
     
         4 . The light emitting device according to  claim 1 , wherein the AlN/GaN layer of the super lattice structure has a variable amount of p-type dopant in each pair of AlN layer and GaN layer alternately grown on the active layer. 
     
     
         5 . The light emitting device according to  claim 1 , wherein the p-type dopant is Mg or Zn. 
     
     
         6 . The light emitting device according to  claim 1 , wherein the AlN layer is a p-type AlN layer doped with the p-type dopant. 
     
     
         7 . The light emitting device according to  claim 1 , wherein the GaN layer is thicker than the AlN layer. 
     
     
         8 . A method for manufacturing a light emitting device, comprising:
 forming an n-type nitride semiconductor layer on a substrate;   forming an active layer on the n-type nitride semiconductor layer;   forming an AlN/GaN layer of a super lattice structure by alternately growing an AlN layer and a GaN layer on the active layer; and   forming a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure,   wherein at least one of the AlN layer and the GaN layer is doped with a p-type dopant.   
     
     
         9 . The method according to  claim 8 , wherein the p-type nitride semiconductor layer is a p-GaN layer. 
     
     
         10 . The method according to  claim 8 , wherein the GaN layer is thicker than the AlN layer. 
     
     
         11 . The method according to  claim 8 , wherein the forming of an AlN/GaN layer of a super lattice structure is performed in a reaction chamber, and comprises:
 (a) supplying source gases comprising a p-type dopant source gas, an N source gas, and an Al source gas into the reaction chamber to grow a p-type AlN layer doped with the p-type dopant on the active layer;   (b) supplying NH 3  gas while stopping the growth of the p-type AlN layer by stopping the supply of the p-type dopant source gas and the Al source gas into the reaction chamber;   (c) supplying NH 3  gas and a Ga source gas into the reaction chamber to grow a u-GaN layer on the p-type AlN layer;   (d) supplying NH 3  gas while stopping the growth of the u-GaN layer by stopping the supply of the Ga source gas; and   repeating (a) to (d) until the AlN/GaN layer of the super lattice structure is formed on the active layer.   
     
     
         12 . The method according to  claim 11 , further comprising:
 supplying source gases comprising the Ga source gas, the N source gas, and the p-type dopant source gas into the reaction chamber to grow the p-type nitride semiconductor layer doped with the p-type dopant on the substrate, after the forming of an AlN/GaN layer of a super lattice structure.   
     
     
         13 . The method according to  claim 11 , wherein, when repeating (a) to (d), the p-type dopant source gas is supplied in an identical flow into the reaction chamber. 
     
     
         14 . The method according to  claim 11 , wherein, when repeating (a) to (d), the p-type dopant source gas is supplied in different flows into the reaction chamber. 
     
     
         15 . The method according to  claim 8 , wherein the forming of an AlN/GaN layer of a super lattice structure is performed in a reaction chamber, and comprises:
 (a) supplying source gases comprising a p-type dopant source gas, an N source gas, and an Al source gas into the reaction chamber to grow a p-type AlN layer doped with the p-type dopant on the active layer;   (b) supplying NH 3  gas while stopping the growth of the p-type AlN layer by stopping the supply of the p-type dopant source gas and the Al source gas into the reaction chamber;   (c) supplying the p-type dopant source gas, a Ga source gas, and the NH 3  gas into the reaction chamber to grow a p-GaN layer on the p-type AlN layer;   (d) supplying NH 3  gas while stopping the growth of the p-GaN layer by stopping the supply of the p-type dopant source gas and the Ga source gas; and   repeating (a) to (d) until the AlN/GaN layer of the super lattice structure is formed on the active layer.   
     
     
         16 . The method according to  claim 8 , wherein the forming of an AlN/GaN layer of a super lattice structure is performed in a reaction chamber, and comprises:
 (a) supplying source gases comprising an N source gas and an Al source gas into the reaction chamber to grow the AlN layer on the active layer;   (b) supplying NH 3  gas while stopping the growth of the AlN layer by stopping the supply of the Al source gas into the reaction chamber;   (c) supplying a p-type dopant source gas, a Ga source gas, and NH 3  gas into the reaction chamber to grow a p-GaN layer on the AlN layer;   (d) supplying NH 3  gas while stopping the growth of the p-GaN layer by stopping the supply of the p-type dopant source gas and the Ga source gas; and   repeating (a) to (d) until the AlN/GaN layer of the super lattice structure is formed on the active layer.   
     
     
         17 . The method according to  claim 11 , wherein the p-type dopant source gas is CP 2 Mg or DMZn. 
     
     
         18 . The method according to  claim 15 , wherein the p-type dopant source gas is CP 2 Mg or DMZn. 
     
     
         19 . The method according to  claim 16 , wherein the p-type dopant source gas is CP 2 Mg or DMZn.