Method of removing particles on photomask

Abstract

Provided is a method of removing particles on a photomask. The method includes fabricating a photomask formed with a thin film pattern over a transparent substrate; identifying positions of particles on the photomask by inspecting the photomask; and removing the particles using a nanotweezer.

1 . A method for removing particles on a photomask, the method comprising:
 fabricating a photomask having a thin film pattern over a transparent substrate;   inspecting the photomask to detect the presence and position of a particle on the photomask; and   removing the particle using a nanotweezer.   
     
     
         2 . The method of  claim 1 , wherein the thin film pattern comprises a light blocking layer pattern or a phase shift layer pattern. 
     
     
         3 . The method of  claim 1 , wherein the inspecting the photomask comprises:
 detecting the presence of a particle on an upper portion of the thin film pattern or in a portion where the transparent substrate is exposed between the thin film pattern.   
     
     
         4 . The method of  claim 3 , further comprising identifying position information of the particle detected by the inspection. 
     
     
         5 . The method of  claim 4 , wherein the position information comprises three-dimensional position information. 
     
     
         6 . The method of  claim 1 , wherein the removing the particle using the nanotweezer comprises:
 moving grasping arms of the nanotweezer to the position of the particle;   applying a bias to the nanotweezer to make the grasping arms grasp the particle; and   separating the particle grasped by the grasping arms from the photomask by moving the nanotweezer away from the photomask.   
     
     
         7 . The method of  claim 6 , wherein the bias applied to the nanotweezer is about 8.3 volts or less. 
     
     
         8 . The method of  claim 6 , wherein the bias applied to the nanotweezer is about 8.5 volts or less. 
     
     
         9 . The method of  claim 6 , wherein the bias applied to the nanotweezer is more than about 8.5 volts. 
     
     
         10 . A method for removing particles on a photomask, the method comprising:
 inspecting the photomask to detect the presence and position of a particle on the photomask; and   removing the particle using a nanotweezer.   
     
     
         11 . The method of  claim 10 , further comprising identifying position information of the particle detected by the inspection. 
     
     
         12 . The method of  claim 11 , wherein the position information comprises three-dimensional position information. 
     
     
         13 . The method of  claim 10 , wherein the removing the particle using the nanotweezer comprises:
 moving grasping arms of the nanotweezer to the position of the particle;   applying a bias to the nanotweezer to make the grasping arms grasp the particle; and   separating the particle grasped by the grasping arms from the photomask by moving the nanotweezer away from the photomask.   
     
     
         14 . The method of  claim 13 , wherein the bias applied to the nanotweezer is about 8.3 volts or less. 
     
     
         15 . The method of  claim 13 , wherein the bias applied to the nanotweezer is about 8.5 volts or less. 
     
     
         16 . The method of  claim 13 , wherein the bias applied to the nanotweezer is more than about 8.5 volts.