US2009239454A1PendingUtilityA1

Cmp conditioner and process for producing the same

Assignee: MITSUBISHI MATERIALS CORPPriority: Sep 25, 2006Filed: Sep 21, 2007Published: Sep 24, 2009
Est. expirySep 25, 2026(~0.2 yrs left)· nominal 20-yr term from priority
H10P 52/00B24D 18/00B24B 53/017B24D 3/08B24B 53/12B24D 3/00
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Claims

Abstract

A CMP conditioner having excellent corrosion resistance around abrasive grains includes a grindstone base having, formed on one side, an abrasive grain layer including abrasive grains fixed in a metallic bonding phase treated to form a first protective layer comprising an oxide on the surface of the metallic bonding phase of the abrasive grain layer by the sol-gel method. Subsequently, an aerosol obtained by dispersing fine particles of a brittle material in a gas is jetted and caused to strike on the surface of the first protective layer to form a second protective layer comprising a thick oxide film.

Claims

exact text as granted — not AI-modified
1 . A chemical mechanical polishing (CMP) conditioner, comprising: an abrasive grain layer formed on a surface of substrate, the abrasive grain layer having abrasive grains fixed in a metallic bonding phase, an oxide film formed as a first protective layer at least on a surface of said metallic bonding phase of said abrasive grain layer by a sol-gel method, and a thick oxide film formed as a second protective layer, the thick oxide film being polycrystalline and having substantially no grain boundary layer composed of a glass layer in an interface between crystals thereof. 
   
   
       2 . The CMP conditioner according to  claim 1 , wherein said first protective layer is formed to cover said metallic bonding phase at least in a vicinity of a junction between said abrasive grains and said metallic bonding phase. 
   
   
       3 . The CMP conditioner according to  claim 1 , wherein said second protective layer is composed of alumina. 
   
   
       4 . A process for producing a chemical mechanical polishing (CMP) conditioner comprising:
 providing a disk-shaped substrate having, formed on one side thereof, an abrasive grain layer having abrasive grains fixed in a metallic bonding phase;   forming a first protective layer composed of an oxide at least on a surface of said metallic bonding phase of said abrasive grain layer by a sol-gel method; and   forming a second protective layer composed of a thick oxide film by jetting and striking, on a surface of said first protective layer, an aerosol obtained by dispersing fine particles of a brittle material in a gas, so as to form the CMP conditioner composed of said substrate, said abrasive grain layer, said first protective layer, and said second protective layer.   
   
   
       5 . The process according to  claim 4 , wherein said second protective layer is composed of alumina. 
   
   
       6 . The process according to  claim 4 , wherein said second protective layer is polycrystalline and has substantially no grain boundary layer composed of a glass layer in an interface between crystals thereof. 
   
   
       7 . The process according to  claim 4 , wherein said first protective layer is formed to cover said metallic bonding phase at least in a vicinity of a junction between said abrasive grains and said metallic bonding phase. 
   
   
       8 . The process according to  claim 4 , wherein said second protective layer is composed of alumina.

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