Semiconductor laser apparatus

Abstract

A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

1 - 23 . (canceled) 
   
   
       24 . A semiconductor laser apparatus comprising:
 an electrically conducting package;   an electrically conducting mount provided on said package;   first, second, and third terminals that are provided on said package and isolated from said package;   a fourth terminal that is provided on said package and electrically connected to said mount; and   first, second, and third semiconductor laser devices that are provided on said mount, each having a first electrode, wherein   said first terminal and said second terminal are arranged along a first direction,   said third terminal and said fourth terminal are arranged along a second direction that crosses with said first direction,   said first, second, and third semiconductor laser devices are arranged such that said first electrode of said first semiconductor laser device is located closer to said first terminal than said first electrodes of said second and third semiconductor laser devices, said first electrode of said second semiconductor laser device is located closer to said second terminal than said first electrodes of said first and third semiconductor laser devices, and at least a portion of said first electrode of said third semiconductor laser device is located between said first electrode of said first semiconductor laser device and said first electrode of said second semiconductor laser device in said first direction,   said first semiconductor laser device and said second semiconductor laser device are provided on said third semiconductor laser device,   said third semiconductor laser device has a first surface and has an insulating film formed on said first surface,   said first electrode of said first semiconductor laser device is formed on said insulating film,   said first electrode of said second semiconductor laser device is formed on said insulating film,   said first terminal and said first electrode of said first semiconductor laser device are connected through a first wire on said insulating film, said second terminal and said first electrode of said second semiconductor laser device are connected through a second wire on said insulating film, and said third terminal and said first electrode of said third semiconductor laser device are connected through a third wire, and   said third semiconductor laser device further has a second electrode that is electrically connected to said mount.   
   
   
       25 . The semiconductor laser apparatus according to  claim 24 , wherein
 said third semiconductor laser device has a ridge portion formed on said first electrode side of said third semiconductor laser device and an insulating film formed on side surfaces of said ridge portion, and   said ridge portion is provided between said first semiconductor laser device and said second semiconductor laser device.   
   
   
       26 . The semiconductor laser apparatus according to  claim 24 , wherein
 a first connection position of said first wire and said first electrode of said first semiconductor laser device, a third connection position of said third wire and said first electrode of said third semiconductor laser device, and a second connection position of said second wire and said first electrode of said second semiconductor laser device are arranged in this order from said first terminal side to said second terminal side in said first direction.   
   
   
       27 . The semiconductor laser apparatus according to  claim 26 , wherein
 said third connection position is set on an opposite side of a laser beam emitting side of each of said first, second, and third semiconductor laser devices relative to at least one of said first and second connection positions.   
   
   
       28 . The semiconductor laser apparatus according to  claim 26 , wherein
 said first, second, and third terminals extend from one side to another side along a third direction that crosses with said first direction and said second direction,   said first, second, and third semiconductor laser devices are arranged to emit main laser beams toward said other side along said third direction,   each of said first and second semiconductor laser devices further has a second electrode, and   said second electrode of said first semiconductor laser device is electrically connected to said mount through a fourth wire in a position on the laser beam emitting side of said first semiconductor laser device relative to said first connection position.   
   
   
       29 . The semiconductor laser apparatus according to  claim 28 , wherein
 said second electrode of said second semiconductor laser device is electrically connected to said mount through a fifth wire in a position on the laser beam emitting side of said second semiconductor laser device relative to said second connection position.   
   
   
       30 . A semiconductor laser apparatus comprising:
 an electrically conducting package;   an electrically conducting mount provided on said package;   first, second, and third terminals that are provided on said package and isolated from said package;   a fourth terminal that is provided on said package and electrically connected to said mount; and   first, second, and third semiconductor laser devices that are provided on said mount, each having a first electrode and a second electrode, wherein   said first terminal and said second terminal are arranged along a first direction,   said third terminal and said fourth terminal are arranged along a second direction that crosses with said first direction,   said first, second, and third semiconductor laser devices are arranged such that said first electrode of said first semiconductor laser device is located closer to said first terminal than said first electrodes of said second and third semiconductor laser devices, and said first electrode of said second semiconductor laser device is located closer to said second terminal than said first electrodes of said first and third semiconductor laser devices,   said semiconductor laser apparatus further comprises a submount between said first electrode of said third semiconductor laser device and said mount,   said first electrode of said third semiconductor laser device is formed between said third semiconductor laser device and said mount and is also formed on said submount to protrude from said third semiconductor laser device,   said first terminal and said first electrode of said first semiconductor laser device are connected through a first wire, said second terminal and said first electrode of said second semiconductor laser device are connected through a second wire, and said third terminal and said first electrode of said third semiconductor laser device are connected through a third wire on said submount, and   said second electrode of said third semiconductor laser device is electrically connected to said mount.   
   
   
       31 . The semiconductor laser apparatus according to  claim 30 , wherein
 at least a portion of said first electrode of said third semiconductor laser device is located closer to said third terminal than said first electrodes of said first and second semiconductor laser devices.   
   
   
       32 . The semiconductor laser apparatus device according to  claim 30 , wherein
 said first semiconductor laser device and said second semiconductor laser device are provided on said third semiconductor laser device.   
   
   
       33 . The semiconductor laser apparatus according to  claim 30 , wherein
 a first connection position of said first wire and said first electrode of said first semiconductor laser device, a third connection position of said third wire and said first electrode of said third semiconductor laser device, and a second connection position of said second wire and said first electrode of said second semiconductor laser device are arranged in this order from said first terminal side to said second terminal side in said first direction.   
   
   
       34 . The semiconductor laser apparatus according to  claim 33 , wherein
 said third connection position is set on an opposite side of a laser beam emitting side of each of said first, second, and third semiconductor laser devices relative to at least one of said first and second connection positions.   
   
   
       35 . The semiconductor laser apparatus according to  claim 33 , wherein
 said first, second, and third terminals extend from one side to another side along a third direction that crosses with said first direction and said second direction,   said first, second, and third semiconductor laser devices are arranged to emit main laser beams toward said other side along said third direction,   said second electrodes of said first, second, and third semiconductor laser devices are electrically connected with one another, and   said second electrode of said third semiconductor laser device is electrically connected to said mount through a fourth wire in a position on the laser beam emitting side of said first semiconductor laser device relative to said first connection position.   
   
   
       36 . The semiconductor laser apparatus according to  claim 30 , wherein
 said third terminal and said protruding portion of said first electrode of said third semiconductor laser device are connected through a third wire on said submount.   
   
   
       37 . A semiconductor laser apparatus comprising:
 an electrically conducting package;   an electrically conducting mount provided on said package;   first and second terminals that are provided on said package and isolated from said package; and   first and second semiconductor laser devices that are provided on said mount, each having a first electrode and a second electrode, wherein   said first semiconductor laser device is provided on said second semiconductor laser device,   said first terminal and said second terminal are arranged along a first direction,   said first terminal and said first electrode of said first semiconductor laser device are connected through a first wire,   at least one of said second electrodes of said first and second semiconductor laser devices is electrically connected to said mount through a wire on the mount side,   said second semiconductor laser device has a first surface and an insulating film formed on said first surface excluding a region of said first surface corresponding to an emission point, and   said first electrode of said first semiconductor laser device is formed to protrude from a region between said first semiconductor laser device and said insulating film to a region on an opposite side to said region corresponding to said emission point of said second semiconductor laser device, and said first wire is bonded to said protruding portion of said first electrode of said first semiconductor laser device.   
   
   
       38 . The semiconductor laser apparatus according to  claim 37 , wherein
 said first terminal and said first electrode of said second semiconductor laser device are connected through a second wire.   
   
   
       39 . The semiconductor laser apparatus according to  claim 37 , wherein
 said first electrode of said second semiconductor laser device is formed at least in said region corresponding to said emission point,   said first electrode of said first semiconductor laser device is formed on said insulating film on one side of said emission point of said second semiconductor laser device, and   said first semiconductor laser device is arranged in a region on said one side of said region corresponding to said emission point of said second semiconductor laser device.   
   
   
       40 . The semiconductor laser apparatus according to  claim 37 , wherein
 said second terminal and said first electrode of said second semiconductor laser device are connected through a second wire through a space above said region corresponding to said emission point of said second semiconductor laser device and above a region on said second semiconductor laser device on an opposite side to a region where said first semiconductor laser device is formed relative to said region corresponding to said emission point.   
   
   
       41 . The semiconductor laser apparatus according to  claim 37 , wherein
 said first terminal and said second terminal are arranged along the first direction that is substantially parallel to a semiconductor laser mounting surface of said mount.   
   
   
       42 . The semiconductor laser apparatus according to  claim 37 , wherein
 said first semiconductor laser device is located closer to said first terminal than said second terminal on said second semiconductor laser device.   
   
   
       43 . The semiconductor laser apparatus according to  claim 37 , wherein
 said second semiconductor laser device includes an active layer composed of a nitride-based semiconductor.