US2009236698A1PendingUtilityA1

Method of fabricating a semiconductor device

58
Assignee: SEMICONDUCTOR ENERGY LABPriority: Sep 4, 1998Filed: Apr 23, 2009Published: Sep 24, 2009
Est. expirySep 4, 2018(expired)· nominal 20-yr term from priority
Inventors:Shunpei YamazakiHisashi Ohtani
H10W 10/181H10P 90/1922H10P 90/1916H10P 90/1908H10P 90/1904Y10S438/973Y10S438/977H10D 30/0323H10D 86/201H10D 86/60H10D 86/40H10D 62/405H10D 30/6758H10D 86/0214
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Claims

Abstract

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

Claims

exact text as granted — not AI-modified
1 . A method of fabricating an SOI substrate comprising the steps of:
 forming an oxide layer on a first single crystal silicon substrate having a main surface of a {110} plane;   forming a hydrogen-containing layer at a predetermined depth in the first single crystal silicon substrate by adding hydrogen into the first single crystal silicon substrate from a side of the main surface through the oxide layer;   bonding the first single crystal silicon substrate and a second single crystal silicon substrate to each other with at least the oxide layer therebetween; and   separating the first single crystal silicon substrate along the hydrogen-containing layer by a heat treatment to form a single crystal semiconductor layer on the second single crystal silicon substrate.   
   
   
       2 . The method according to  claim 1  further comprising flattening a surface of the single crystal semiconductor layer by a heat treatment at 900 to 1200° C. 
   
   
       3 . The method according to  claim 1  wherein the oxide layer is 10 to 500 nm thick. 
   
   
       4 . The method according to  claim 1  wherein the single crystalline silicon layer is 20 to 100 nm thick. 
   
   
       5 . A method of fabricating an SOI substrate comprising the steps of:
 forming an oxide layer on a first single crystal silicon substrate having a main surface of a {110} plane;   forming a hydrogen-containing layer at a predetermined depth in the first single crystal silicon substrate by adding hydrogen into the first single crystal silicon substrate from a side of the main surface through the oxide layer;   bonding the first single crystal silicon substrate and a second single crystal silicon substrate to each other with at least the oxide layer therebetween;   separating the first single crystal silicon substrate along the hydrogen-containing layer by a heat treatment to form a single crystal semiconductor layer on the second single crystal silicon substrate; and   polishing a surface of the single crystal semiconductor layer.   
   
   
       6 . The method according to  claim 5  wherein the oxide layer is 10 to 500 nm thick. 
   
   
       7 . The method according to  claim 5  wherein the single crystalline semiconductor layer subject to the patterning step is 20 to 100 nm thick. 
   
   
       8 . The method according to  claim 5  wherein the surface of the single crystal semiconductor layer is polished by chemical mechanical polishing. 
   
   
       9 . A method of fabricating an SOI substrate comprising the steps of:
 forming an oxide layer on a single crystal silicon substrate having a main surface of a {110} plane;   forming a hydrogen-containing layer at a predetermined depth in the single crystal silicon substrate by adding hydrogen into the single crystal silicon substrate from a side of the main surface through the oxide layer;   bonding the single crystal silicon substrate and a polycrystal silicon substrate to each other with at least the oxide layer therebetween;   separating the single crystal silicon substrate along the hydrogen-containing layer by a heat treatment to form a single crystal semiconductor layer on the polycrystal silicon substrate.   
   
   
       10 . The method according to  claim 9  further comprising flattening a surface of the single crystal semiconductor layer by a heat treatment at 900 to 1200° C. 
   
   
       11 . The method according to  claim 9  wherein the oxide layer is 10 to 500 nm thick. 
   
   
       12 . The method according to  claim 9  wherein the single crystalline semiconductor layer subject to the patterning step is 20 to 100 nm thick. 
   
   
       13 . A method of fabricating an SOI substrate comprising the steps of:
 forming an oxide layer on a single crystal silicon substrate;   forming a hydrogen-containing layer at a predetermined depth in the single crystal silicon substrate by adding hydrogen into the single crystal silicon substrate through the oxide layer;   bonding the single crystal silicon substrate and a polycrystal silicon substrate to each other with at least the oxide layer therebetween;   separating the single crystal semiconductor substrate along the hydrogen-containing layer by a heat treatment to form a single crystal semiconductor layer on the polycrystal silicon substrate.   
   
   
       14 . The method according to  claim 13  further comprising flattening a surface of the single crystal semiconductor layer by a heat treatment at 900 to 1200° C. 
   
   
       15 . The method according to  claim 13  wherein the oxide layer is 10 to 500 nm thick. 
   
   
       16 . The method according to  claim 13  wherein the single crystalline silicon layer is 20 to 100 nm thick. 
   
   
       17 . An SOI substrate comprising:
 a silicon substrate;   an oxide layer on the silicon substrate;   a single crystal silicon layer on the oxide layer, the single crystal silicon layer having a main surface of a {110} plane,   wherein the single crystal silicon layer is separated from a single crystal silicon substrate.   
   
   
       18 . The SOI substrate according to  claim 17  wherein the single crystalline silicon layer is 20 to 100 nm thick. 
   
   
       19 . An SOI substrate comprising:
 a silicon substrate;   a first oxide layer on the silicon substrate;   a second oxide layer on the first oxide layer; and   a single crystal silicon layer on the second oxide layer, the single crystal silicon layer having a main surface of a {110} plane.   
   
   
       20 . The SOI substrate according to  claim 19  wherein the single crystalline silicon layer is 20 to 100 nm thick. 
   
   
       21 . The SOI substrate according to  claim 19  wherein the first oxide layer is 10 to 500 nm thick.

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