Barrier film material and pattern formation method using the same

Abstract

A resist film made of a chemically amplified resist is formed on a substrate. Subsequently, a barrier film for preventing a component of the resist film from eluting into an immersion liquid or preventing the immersion liquid from permeating into the resist film is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern made of the resist film.

1 - 52 . (canceled) 
     
     
         53 . A pattern formation method comprising:
 forming a resist film made of a chemically amplified resist material on a substrate;   forming a barrier film on the resist film;   performing pattern exposure by selectively irradiating the resist film with exposing light with water provided on the barrier film; and   forming a resist pattern by developing the resist film after the pattern exposure,   wherein the barrier film is made of a barrier film material including an alkali-soluble polymer and an alcohol solvent.   
     
     
         54 . The pattern formation method of  claim 53 ,
 wherein the barrier film is removed by an alkaline developer.   
     
     
         55 . The pattern formation method of  claim 53 ,
 wherein the barrier film is removed in the forming the resist pattern.   
     
     
         56 . The pattern formation method of  claim 53 ,
 wherein the barrier film is removed by a developer for forming the resist pattern.   
     
     
         57 . The pattern formation method of  claim 53 ,
 wherein the water is provided on the barrier film by a puddle method.   
     
     
         58 . The pattern formation method of  claim 53 , further comprising annealing the barrier film before the performing pattern exposure. 
     
     
         59 . The pattern formation method of  claim 53 ,
 wherein the alkali-soluble polymer is at least one of polyvinyl hexafluoroisopropyl alcohol, polyvinyl alcohol, polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.   
     
     
         60 . The barrier film material of  claim 53 ,
 wherein the barrier film material includes a fluorine-based surface active agent.   
     
     
         61 . The barrier film material of  claim 53 ,
 wherein the exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser or Ar 2  laser.   
     
     
         62 . A method of fabricating a semiconductor device, the method comprising:
 forming a target film on a substrate;   forming a resist film made of a chemically amplified resist material on the target film;   forming a barrier film on the resist film;   performing pattern exposure by selectively irradiating the resist film with exposing light with water provided on the barrier film;   forming a resist pattern by developing the resist film after the pattern exposure; and   etching the target film by using the resist pattern as an etching mask,   wherein the barrier film is made of a barrier film material including an alkali-soluble polymer and an alcohol solvent.   
     
     
         63 . The method of  claim 62 ,
 wherein the barrier film is removed by an alkaline developer.   
     
     
         64 . The method of  claim 62 ,
 wherein the barrier film is removed in the forming the resist pattern.   
     
     
         65 . The method of  claim 62 ,
 wherein the barrier film is removed by a developer for forming the resist pattern.   
     
     
         66 . The method of  claim 62 ,
 wherein the water is provided on the barrier film by a puddle method.   
     
     
         67 . The method of  claim 62 , further comprising annealing the barrier film before the performing pattern exposure. 
     
     
         68 . The method of  claim 62 ,
 wherein the alkali-soluble polymer is at least one of polyvinyl hexafluoroisopropyl alcohol, polyvinyl alcohol, polyacrylic acid, polystyrenesulfonic acid, hydroxyethyl cellulose, polyisoprenesulfonic acid, polyvinyl pyrrolidone and pullulan.   
     
     
         69 . The method of  claim 62 ,
 wherein the barrier film material includes a fluorine-based surface active agent.   
     
     
         70 . The method of  claim 62 ,
 wherein the exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, ArKr laser or Ar 2  laser.