US2009226361A1PendingUtilityA1

Cvd-grown graphite nanoribbons

Assignee: CAMPOS-DELGADO JESSICAPriority: Mar 5, 2008Filed: Mar 5, 2008Published: Sep 10, 2009
Est. expiryMar 5, 2028(~1.6 yrs left)· nominal 20-yr term from priority
C01B 32/15D01F 9/127B82Y 40/00B82Y 30/00
45
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Claims

Abstract

The nanoribbon structure includes a plurality of thin graphite ribbons having long and highly crystalline structure. A voltage is applied across the length of the thin graphite ribbons to cause current flow so as to increase crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of the thin graphite ribbons.

Claims

exact text as granted — not AI-modified
1 . A method of forming bulk nanoribbon structure comprising:
 forming a plurality of thin graphite ribbons having long and highly crystalline nanoribbons; and   annealing said thin graphite ribbons using Joule heating by applying a voltage across the length of the thin graphite ribbons to cause current flow so as to produce heat that increases crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of said thin graphite ribbons.   
     
     
         2 . The method of  claim 1 , wherein thin graphite ribbons attach to metal particles and other biological molecules on the surface. 
     
     
         3 . The method of  claim 1 , wherein thin graphite ribbons comprises N, P, B, Si as dopants. 
     
     
         4 . The method of  claim 1 , wherein thin graphite ribbons comprises Li-ions as dopants. 
     
     
         5 . The method of  claim 1 , wherein said graphene edges emit electrons when a voltage is applied 
     
     
         6 . The method of  claim 1 , wherein said thin graphite ribbons are exfoliated using Li, K, H 2 SO 4 , FeCl 3 , Br 2 . 
     
     
         7 . The method of  claim 1 , wherein said highly crystalline nanoribbons comprise a length less than 30 μm. 
     
     
         8 . The method of  claim 7 , wherein said highly crystalline nanoribbons comprise a width between 20 nm and 300 nm. 
     
     
         9 . The method of  claim 1 , wherein said interplanar stacking order comprises an ABAB . . . stacking order. 
     
     
         10 . The method of  claim 1  further comprising treating said thin graphite ribbons in an Argon flow at high temperatures up to 2800° C. using a graphite oven. 
     
     
         11 . A bulk nanoribbon structure comprising a plurality of thin graphite ribbons having long and highly crystalline nanoribbons, wherein a voltage is applied across the length of the thin graphite ribbons to cause current flow so as to increase crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of said thin graphite ribbons. 
     
     
         12 . The bulk nanoribbon structure of  claim 11 , wherein thin graphite ribbons attach to metal particles and other biological molecules on the ribbon surface. 
     
     
         13 . The bulk nanoribbon structure of  claim 11 , wherein thin graphite ribbons comprises N, P, B, Si as dopants. 
     
     
         14 . The bulk nanoribbon structure of  claim 11 , wherein thin graphite ribbons comprises Li-ions as dopants. 
     
     
         15 . The bulk nanoribbon structure of  claim 11 , wherein said graphene edges emit electrons when a voltage is applied 
     
     
         16 . The bulk nanoribbon structure of  claim 11 , wherein said thin graphite ribbons are exfoliated using Li, K, H 2 SO 4 , FeCl 3 , Br 2 . 
     
     
         17 . The bulk nanoribbon structure of  claim 11 , wherein said highly crystalline ribbons comprise a length less then 30 μm. 
     
     
         18 . The bulk nanoribbon structure of  claim 17 , wherein said highly crystalline nanoribbons comprise a width between 20 nm and 300 nm. 
     
     
         19 . The bulk nanoribbon structure of  claim 11 , wherein said interplanar stacking order comprises an ABAB . . . stacking order. 
     
     
         20 . The bulk nanoribbon structure of  claim 17 , said thin graphite ribbons are treated in an Argon flow at high temperatures up to 2800° C. using a graphite oven to modify original properties.

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