US2009226361A1PendingUtilityA1
Cvd-grown graphite nanoribbons
Est. expiryMar 5, 2028(~1.6 yrs left)· nominal 20-yr term from priority
Inventors:Jessica Campos-DelgadoMildred DresselhausMorinobu EndoEdgar E. Gracia-EspinoXiaoting JiaJose Manuel Romo-HerreraHumberto TerronesMauricio Terrones
C01B 32/15D01F 9/127B82Y 40/00B82Y 30/00
45
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Claims
Abstract
The nanoribbon structure includes a plurality of thin graphite ribbons having long and highly crystalline structure. A voltage is applied across the length of the thin graphite ribbons to cause current flow so as to increase crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of the thin graphite ribbons.
Claims
exact text as granted — not AI-modified1 . A method of forming bulk nanoribbon structure comprising:
forming a plurality of thin graphite ribbons having long and highly crystalline nanoribbons; and annealing said thin graphite ribbons using Joule heating by applying a voltage across the length of the thin graphite ribbons to cause current flow so as to produce heat that increases crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of said thin graphite ribbons.
2 . The method of claim 1 , wherein thin graphite ribbons attach to metal particles and other biological molecules on the surface.
3 . The method of claim 1 , wherein thin graphite ribbons comprises N, P, B, Si as dopants.
4 . The method of claim 1 , wherein thin graphite ribbons comprises Li-ions as dopants.
5 . The method of claim 1 , wherein said graphene edges emit electrons when a voltage is applied
6 . The method of claim 1 , wherein said thin graphite ribbons are exfoliated using Li, K, H 2 SO 4 , FeCl 3 , Br 2 .
7 . The method of claim 1 , wherein said highly crystalline nanoribbons comprise a length less than 30 μm.
8 . The method of claim 7 , wherein said highly crystalline nanoribbons comprise a width between 20 nm and 300 nm.
9 . The method of claim 1 , wherein said interplanar stacking order comprises an ABAB . . . stacking order.
10 . The method of claim 1 further comprising treating said thin graphite ribbons in an Argon flow at high temperatures up to 2800° C. using a graphite oven.
11 . A bulk nanoribbon structure comprising a plurality of thin graphite ribbons having long and highly crystalline nanoribbons, wherein a voltage is applied across the length of the thin graphite ribbons to cause current flow so as to increase crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of said thin graphite ribbons.
12 . The bulk nanoribbon structure of claim 11 , wherein thin graphite ribbons attach to metal particles and other biological molecules on the ribbon surface.
13 . The bulk nanoribbon structure of claim 11 , wherein thin graphite ribbons comprises N, P, B, Si as dopants.
14 . The bulk nanoribbon structure of claim 11 , wherein thin graphite ribbons comprises Li-ions as dopants.
15 . The bulk nanoribbon structure of claim 11 , wherein said graphene edges emit electrons when a voltage is applied
16 . The bulk nanoribbon structure of claim 11 , wherein said thin graphite ribbons are exfoliated using Li, K, H 2 SO 4 , FeCl 3 , Br 2 .
17 . The bulk nanoribbon structure of claim 11 , wherein said highly crystalline ribbons comprise a length less then 30 μm.
18 . The bulk nanoribbon structure of claim 17 , wherein said highly crystalline nanoribbons comprise a width between 20 nm and 300 nm.
19 . The bulk nanoribbon structure of claim 11 , wherein said interplanar stacking order comprises an ABAB . . . stacking order.
20 . The bulk nanoribbon structure of claim 17 , said thin graphite ribbons are treated in an Argon flow at high temperatures up to 2800° C. using a graphite oven to modify original properties.Join the waitlist — get patent alerts
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