Molecular controlled semiconductor device

Abstract

A semiconductor sensing device for sensing presence, absence or level of species-of-interest in the environment is disclosed. The semiconductor sensing device comprises at least one layer of molecules deposited thereon. The molecules are electrically-responsive to the species-of-interest in a manner such that when the molecules interact with the species-of-interest, a reverse breakdown voltage characterizing the semiconductor sensing device is modified.

1 . A semiconductor sensing device, comprising:
 (a) a device body made of at least two regions of semiconductor material forming at least one p-n junction thereamongst, wherein charge carrier concentrations of said at least two regions of semiconductor material are selected such that a current-voltage characteristic of said at least one p-n junction comprises a predetermined reverse breakdown voltage; and   (b) at least one layer of molecules deposited on at least one of said at least two regions of said semiconductor material, said molecules being electrically-responsive to a species-of-interest being at least one of a photon, a chemical substance and a biological material in a manner such that upon exposure of the device to said species-of-interest, said molecules interact with said species-of-interest, and said predetermined reverse breakdown voltage is modified.   
   
   
       2 . The device of  claim 1 , wherein said molecules and said charge carrier concentrations are selected such that said modification of said reverse breakdown voltage is accompanied by generation of an avalanche current through said at least one p-n junction. 
   
   
       3 . The device of  claim 1 , wherein said electrical response of said molecules is characterized in that a charge of said molecules and a respective region of said at least two regions is modified when said molecules interact with said species-of-interest. 
   
   
       4 . The device of  claim 1 , wherein said electrical response of said molecules is characterized in that a dipole moment of said molecules and a respective region of said at least two regions is modified when said molecules interact with said species-of-interest. 
   
   
       5 . The device of  claim 1 , further comprising a covering film deposited on at least one of said at least two regions. 
   
   
       6 . The device of  claim 1 , further comprising at least two conducting pads for connecting the device to a voltage source, wherein each conducting pad of said at least two conducting pads is formed, attached or integrated with one region of said at least two regions of semiconductor material. 
   
   
       7 . The device of  claim 1 , further comprising an additional electrode for electrically controlling said predetermined reverse breakdown voltage. 
   
   
       8 . The device of  claim 7 , wherein said additional electrode at least partially engages a surface of said device body. 
   
   
       9 . The device of  claim 7 , wherein said additional electrode is at least partially buried in said device body. 
   
   
       10 . The device of  claim 1 , wherein said at least two regions of semiconductor material comprise, a first region a second region and a third region, said first region being made of a first type semiconductor material and said second and said third regions being made of a second type semiconductor material. 
   
   
       11 . The device of  claim 1 , wherein said second region is disposed on or formed in said first region so as to at least partially interpose between said first region and said third region. 
   
   
       12 . The device of  claim 10 , further comprising an additional electrode for electrically controlling said predetermined reverse breakdown voltage. 
   
   
       13 . The device of  claim 12 , wherein said additional electrode comprises a perforated electrode disposed on said third region and being connectable to a voltage source. 
   
   
       14 . The device of  claim 12 , wherein said additional electrode comprises a buried structure having a semiconductor electrode connectable to a voltage source and a semiconductor barrier, wherein said buried structure is formed in said device body in a manner such that said semiconductor electrode and said device body are interposed by said semiconductor barrier. 
   
   
       15 . The device of  claim 11 , wherein said molecules are deposited on said third region. 
   
   
       16 . The device of  claim 15 , wherein said molecules and said charge carrier concentration of said third region are selected such that a combination of said molecules and said third region is characterized by a predetermined dipole moment, said predetermined dipole moment being modified when said molecules interact with said species-of-interest. 
   
   
       17 . The device of  claim 16 , wherein said charge carrier concentration of said first region of said first type semiconductor material is larger than said charge carrier concentration of said second and said third regions of said second type semiconductor material. 
   
   
       18 . The device of  claim 16 , wherein a thickness of said second region is at least three times a characteristic Debye length thereof. 
   
   
       19 . The device of  claim 16 , wherein a thickness of said third region is from about two times to about five times a characteristic Debye length thereof. 
   
   
       20 . The device of  claim 18 , wherein said second region describes a closed shape surrounding said third region of said second type semiconductor material. 
   
   
       21 . The device of  claim 20 , wherein said closed shape has a width of at least two times said characteristic Debye length of said second region. 
   
   
       22 . The device of  claim 20 , wherein said closed shape has an inner diameter of at least five times said characteristic Debye length of said second region. 
   
   
       23 . A method of manufacturing a semiconductor sensing device, the method comprising:
 (a) providing a device body and forming therein at least two regions of semiconductor material, so as to define at least one p-n junction, wherein charge carrier concentrations of said at least two regions of semiconductor material are selected such that a current-voltage characteristic of said at least one p-n junction comprises a predetermined reverse breakdown voltage; and   (c) depositing at least one layer of molecules on at least one of said at least two region of said semiconductor material, said molecules being electrically-responsive to a species-of-interest being at least one of a photon, a chemical substance and a biological material in a manner such that when said molecules interact with said species-of-interest, said predetermined reverse breakdown voltage is modified.   
   
   
       24 . The method of  claim 23 , further comprising forming an additional electrode in said device body for electrically controlling said predetermined reverse breakdown voltage. 
   
   
       25 . A method of sensing presence, absence or level of species-of-interest in the environment, the species-of-interest being at least one of a photon, a chemical substance and a biological material, the method comprising:
 (a) providing semiconductor sensing device having at least one layer of molecules deposited thereon, wherein said molecules are electrically-responsive to the species-of-interest in a manner such that when said molecules interact with the species-of-interest, a reverse breakdown voltage characterizing said semiconductor sensing device is modified;   (b) applying a reverse bias to said semiconductor sensing device;   (c) exposing said semiconductor sensing device to the environment; and   (d) using modifications in said reverse breakdown voltage for sensing presence, absence or level of the species-of-interest.   
   
   
       26 . The method of  claim 25 , further comprising heating said semiconductor sensing device so as to desorb the species-of-interest off said molecules.