Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium

Abstract

The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

1 . An electrode for use in a plasma process, wherein the electrode is provided to be opposed to a lower electrode on which a substrate is placed in a processing space, wherein high frequency power is supplied to a space between the electrode and the lower electrode, so as to generate plasma therein and perform the plasma process to the substrate, and wherein the electrode comprises:
 an electrode plate provided to be opposed to the lower electrode;   a support member provided opposite to the lower electrode across the electrode plate, configured for supporting the electrode plate, and having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the support member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space of the support member and configured for discharging the dielectric from the dielectric injection space.   
   
   
       2 . The electrode for use in the plasma process according to  claim 1 , wherein the dielectric injection space of the support member is provided along a face on the side of the electrode plate of the support member. 
   
   
       3 . The electrode for use in the plasma process according to  claim 1 ,
 wherein a member having a gas diffusion space formed therein is provided, the gas diffusion space being connected with a processing gas supply source configured for supplying a processing gas to the substrate, and   wherein a plurality of gas discharge ports are provided on the electrode plate, each of the gas discharge ports being in communication with the gas diffusion space and configured for injecting the processing gas into the processing space, like a shower.   
   
   
       4 . The electrode for use in the plasma process according to  claim 3 , wherein the member having the gas diffusion space formed therein is also used as the electrode plate or used as the support member. 
   
   
       5 . The electrode for use in the plasma process according to  claim 3 , wherein the member having the gas diffusion space formed therein is provided between the electrode plate and the support member. 
   
   
       6 . The electrode for use in the plasma process according to  claim 5 , wherein the member having the gas diffusion space formed therein is formed from a dielectric having a relative permittivity within a range of 1 to 10. 
   
   
       7 . The electrode for use in the plasma process according to  claim 1 , wherein a gas supply member is provided to be projected downward from a central portion of the electrode plate, the gas supply member having a dome-like shape and a plurality of gas discharge apertures formed therein, each of the gas discharge apertures being configured for injecting the processing gas into the processing space. 
   
   
       8 . The electrode for use in the plasma process according to  claim 1 , wherein a temperature control mechanism adapted for controlling the temperature of the support member is provided to the support member. 
   
   
       9 . An electrode for use in a plasma process, wherein the electrode is provided to be opposed to an upper electrode in a processing space, wherein high frequency power is supplied to a space between the electrode and the upper electrode, so as to generate plasma therein and perform the plasma process to a substrate placed on one face of the electrode, and wherein the electrode comprises:
 an electrode member provided to be opposed to the upper electrode, wherein at least one of a first high frequency power source for generating the plasma and a second high frequency power source for introducing ions present in the plasma is connected with the electrode member;   a dielectric-injection-space-constituting member having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the dielectric-injection-space-constituting member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space and configured for discharging the dielectric from the dielectric injection space.   
   
   
       10 . The electrode for use in the plasma process according to  claim 1  or  9 , wherein the dielectric injection space is provided in a position corresponding to a central portion of the substrate. 
   
   
       11 . The electrode for use in the plasma process according to  claim 1  or  9 , wherein the dielectric discharge passage is connected with the dielectric supply source, such that the dielectric can be circulated between the dielectric injection space and the dielectric supply source. 
   
   
       12 . The electrode for use in the plasma process according to  claim 1  or  9 , further comprising a storage unit adapted for storing therein data correlating a kind of each process with an injection amount of the dielectric into the dielectric injection space, and a means adapted for reading the injection amount of the dielectric corresponding to the kind of each selected process from the storage unit then controlling the injection amount of the dielectric. 
   
   
       13 . A plasma processing apparatus including an upper electrode, a table constituting a lower electrode, and a processing vessel having a processing space containing the upper electrode and the lower electrode therein, the plasma processing apparatus comprising:
 a first high frequency power source connected with the lower electrode and used for generating plasma;   a gas supply passage configured for supplying a processing gas into the processing vessel; and   a vacuum exhaust means adapted for evacuating the interior of the processing vessel,   wherein the upper electrode comprises:   an electrode plate provided to be opposed to the lower electrode;   a support member provided opposite to the lower electrode across the electrode plate, configured for supporting the electrode plate, and having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the support member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space of the support member and configured for discharging the dielectric from the dielectric injection space.   
   
   
       14 . A plasma processing apparatus including an upper electrode, a table constituting a lower electrode, and a processing vessel having a processing space containing the upper electrode and lower electrode therein, the plasma processing apparatus comprising:
 a first high frequency power source connected with the lower electrode and used for generating plasma;   a gas supply passage configured for supplying a processing gas into the processing vessel; and   a vacuum exhaust means adapted for evacuating the interior of the processing vessel,   wherein the lower electrode comprises:   an electrode member provided to be opposed to the upper electrode;   a dielectric-injection-space-constituting member having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the dielectric-injection-space-constituting member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space and configured for discharging the dielectric from the dielectric injection space.   
   
   
       15 . A plasma processing apparatus including an upper electrode, a table constituting a lower electrode, and a processing vessel having a processing space containing the upper electrode and the lower electrode therein, the plasma processing apparatus comprising:
 a first high frequency power source connected with either one of the upper electrode and lower electrode and used for generating plasma;   a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma;   a gas supply passage configured for supplying a processing gas into the processing vessel; and   a vacuum exhaust means adapted for evacuating the interior of the processing vessel into a vacuum state,   wherein the upper electrode comprises:   an electrode plate provided to be opposed to the lower electrode;   a support member provided opposite to the lower electrode across the electrode plate, configured for supporting the electrode plate, and having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the support member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space of the support member and configured for discharging the dielectric from the dielectric injection space.   
   
   
       16 . A plasma processing apparatus including an upper electrode, a table constituting a lower electrode, and a processing vessel having a processing space containing the upper electrode and the lower electrode therein, the plasma processing apparatus comprising:
 a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma;   a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma;   a gas supply passage configured for supplying a processing gas into the processing vessel; and   a vacuum exhaust means adapted for evacuating the interior of the processing vessel,   wherein the lower electrode comprises:   an electrode member provided to be opposed to the upper electrode;   a dielectric-injection-space-constituting member having a dielectric injection space formed therein such that a dielectric used for controlling intensity of an electric field in the processing space can be injected into the dielectric injection space;   a dielectric supply source connected with the dielectric injection space of the dielectric-injection-space-constituting member via a dielectric supply passage and configured for supplying the dielectric into the dielectric injection space; and   a dielectric discharge passage connected with the dielectric injection space and configured for discharging the dielectric from the dielectric injection space.   
   
   
       17 . A plasma processing method using a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, and a first high frequency power source connected with the lower electrode and used for generating plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:
 supplying a dielectric into a dielectric injection space formed in the upper electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       18 . A plasma processing method using a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma, and a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:
 supplying a dielectric into a dielectric injection space formed in the upper electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to provide a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       19 . A plasma processing method using a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, and a first high frequency power source connected with the lower electrode and used for generating plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:
 supplying a dielectric into a dielectric injection space formed in the lower electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       20 . A plasma processing method using a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma, and a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:
 supplying a dielectric into a dielectric injection space formed in the lower electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       21 . The plasma processing method according to any one of  claims 17  to  20 , further comprising the steps of:
 reading data correlating a kind of each process with an injection amount of the dielectric into the dielectric injection space, prior to the step of supplying the dielectric; and   controlling the injection amount of the dielectric into the dielectric injection space.   
   
   
       22 . A storage medium for storing therein a computer program for driving a computer to execute a plasma processing method,
 wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, and a first high frequency power source connected with the lower electrode and used for generating plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:   supplying a dielectric into a dielectric injection space formed in the upper electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       23 . A storage medium for storing therein a computer program for driving a computer to execute a plasma processing method,
 wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for storing the upper electrode and the lower electrode therein, a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma, and a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:   supplying a dielectric into a dielectric injection space formed in the upper electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       24 . A storage medium for storing therein a computer program for driving a computer to execute a plasma processing method,
 wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, and a first high frequency power source connected with the lower electrode and used for generating plasma, wherein the upper electrode and lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:   supplying a dielectric into a dielectric injection space formed in the lower electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.   
   
   
       25 . A storage medium for storing therein a computer program for driving a computer to execute a plasma processing method,
 wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma, and a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of:   supplying a dielectric into a dielectric injection space formed in the lower electrode;   placing a substrate on the table;   supplying a processing gas into the processing vessel; and   changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma,   wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.