Shower head structure for processing semiconductor

Abstract

A shower head structure disposed in a device 2 for processing a semiconductor while supplying processing gas to a processing space S for storing a heated processed substrate W, comprising a shower head 12 having a plurality of gas injection holes 20 B for supplying the processing gas and a light introducing rod 68 of a radiation thermometer 66 inserted into at least one of the gas injection holes 20 B.

1 . A method for performing semiconductor processing while providing a processing gas into a processing space accommodating a substrate to be processed, comprising the steps of:
 heating, by using a heating means, the substrate disposed on a susceptor installed in a processing chamber forming the processing space and capable of being pumped in vacuum;   performing the semiconductor processing by providing the processing gas from a plurality of gas injection holes of a shower head toward the substrate heated by the heating means; and   while performing the semiconductor processing, controlling the heating means based on a detected value of each of one or more radiation thermometers, each thermometer having a light introducing rod inserted through one of the gas injection holes.   
   
   
       2 . A method for performing semiconductor processing while providing a processing gas into a processing space accommodating a substrate to be processed, comprising the steps of:
 heating, by using a heating means, the substrate disposed on a susceptor installed in a processing chamber forming the processing space and capable of being pumped in vacuum;   performing the semiconductor processing by providing the processing gas from a plurality of gas injection holes of a shower head toward the substrate heated by the heating means;   while performing the semiconductor processing, controlling the heating means based on a detected value of a temperature measuring device installed at the susceptor;   executing dummy processing by heating a dummy substrate for temperature correction placed on the susceptor by the heating means;   while, performing the dummy processing, monitoring the temperature of the dummy substrate by using one or more radiation thermometers each having a light introducing rod inserted through one of the gas injection holes; and   correcting a setting temperature of the susceptor based on a detected value of each radiation thermometer and a target temperature value of the substrate.   
   
   
       3 . The method of  claim 2 , further comprising the step of cleaning an inside of the processing chamber after performing the semiconductor processing with respect to a number of substrates to be processed. 
   
   
       4 . The method of  claim 3 , further comprising, after the cleaning step, the step of supplying the processing gas without loading a substrate to be processed in the processing chamber and forming a pre-coat thin film of the processing gas on an inner surface of the processing chamber. 
   
   
       5 . The method of  claim 3 , wherein during the cleaning step, the light introducing rod is retreated from said one of the gas injection holes into which the light introducing rod is inserted by using an elevator. 
   
   
       6 . The method of  claim 1 , wherein the susceptor is divided into a plurality of heating zones and the temperature of each heating zone is controlled independently. 
   
   
       7 . The method of  claim 6 , wherein the temperature of each heating zone is controlled based on detected values of at least one radiation thermometer installed at each of the heating zones. 
   
   
       8 . The method of  claim 1 , wherein the processing gas comprises a first gas and a second gas, and the first gas and the second gas are respectively introduced into the processing space by using the shower head which is configured such that the first gas and the second gas are prevented from being mixed with each other therein. 
   
   
       9 . The method of  claim 8 , wherein the first gas is a source gas and the second gas is an assist gas. 
   
   
       10 . The method of  claim 9 , wherein the source gas is introduced into the processing space through a gas injection hole into which the light introducing rod is not inserted and the assist gas is introduced into the processing space through said one of the gas infection holes into which the light introducing rod is inserted. 
   
   
       11 . A method for performing semiconductor processing on a substrate accommodated in a processing space comprising the steps of:
 heating, by using a heating means, the substrate disposed on a susceptor installed in a processing chamber forming the processing space and capable of being pumped in vacuum;   employing a shower head to perform the semiconductor processing by providing a first and a second gas from a first and a second gas injection holes of the shower head toward the substrate heated by the heating means, wherein the shower head includes a first head space and a second head space formed therein, the first head space being separated from the second head space, and the first and the second gas are introduced to the first gas injection holes and the second gas injection holes through the first and the second head space, respectively, and wherein the shower head further includes a heat ray introducing passage formed therethrough and separated from the first and the second head space; and   while performing the semiconductor processing, controlling the heating means based on a detected value of a radiation thermometer facing through a measurement window at an upper opening part of the heat ray introducing passage,   wherein a gas introducing passage is formed inside the shower head and connected to the heat ray introducing passage to introduce an additional gas thereinto, the gas introducing passage being separated from the first and the second head space, and the additional gas being introduced into the processing space through the heat ray introducing passage while performing the semiconductor processing, and   wherein the additional gas, the first gas, and the second gas are different from each other.   
   
   
       12 . The method of  claim 11 , wherein the additional gas is discharged from a lower end opening of the heat ray introducing passage to be diffused while the additional gas is falling toward outside of the susceptor; and the heat ray introducing passage is spaced apart from a center of the shower head such that a position of a main gas stream of the additional gas discharged therefrom falls outside an outer circumference of the substrate on the susceptor when the gas stream reaches an identical horizontal level to that of an upper surface of the susceptor. 
   
   
       13 . The method of  claim 11 , wherein the heat ray introducing passage is separated from a first and a second head space formed inside the shower head such that the additional gas, the first gas and the second gas are supplied to the processing space from the shower head without being mixed. 
   
   
       14 . The device of  claim 13 , wherein a gas species constituting the additional gas is different from that of the first and the second gas. 
   
   
       15 . The method of  claim 14 , wherein the heat ray introducing passage is separated from the first and the second head space formed inside the shower head such that the additional gas, the first gas and the second gas are supplied to the processing space from the shower head without being mixed. 
   
   
       16 . The method of  claim 11 , wherein the additional gas flowing through the heat ray introducing passage prevents an unwanted film from adhering to an inner surface of the measurement window.