High yielding, voltage, temperature, and process insensitive lateral poly fuse memory

Abstract

The present invention, generally speaking, provides for a non volatile memory cell requiring no extra process steps. In one embodiment, the non volatile memory cell is a lateral polysilicon programmable read only memory cell, in particular a lateral poly fuse memory cell. Technique are provided to achieve a high yielding, voltage, temperature, and process insensitive lateral poly fuse memory. In one embodiment, a fusible link memory circuit includes a fusible link memory element and a programming circuit. The programming circuit includes a replica of the fusible link memory element and a programming current source for producing a known current density in the fusible link memory element in spite of variations including at least process variations.

1 .- 14 . (canceled) 
   
   
       15 . A constant current density current source comprising: a constant voltage source for producing a constant voltage; and means for applying the constant voltage to resistive element.