Semiconductor device with capacitor and fuse, and method for manufacturing the same

Abstract

A semiconductor device with a capacitor and a fuse, and a method for manufacturing the same are described. The semiconductor device comprises a semiconductor substrate having a capacitor region and a fuse region defined therein, a insulating layer over the semiconductor substrate, a storage node hole formed in the insulating layer, a barrier metal in the storage node hole, a dielectric layer formed on the barrier metal and the insulating layer, a lower metal layer for a plate electrode filling the storage node hole such that it is flush with the dielectric layer, an upper metal layer for the plate electrode on the dielectric layer and lower metal layer for the plate electrode; and a fuse metal layer formed of the same material as that of the upper metal layer for the plate electrode on the dielectric layer in the fuse region.

1 . A semiconductor device with a capacitor and a fuse, comprising:
 a semiconductor substrate having a capacitor region and a fuse region defined therein;   a insulating layer over the semiconductor substrate;   a storage node hole formed in the insulating layer;   a barrier metal in the storage node hole;   a dielectric layer formed on the barrier metal and the insulating layer;   a lower metal layer for a plate electrode filling the storage node hole such that it is flush with the dielectric layer;   an upper metal layer for the plate electrode on the dielectric layer and lower metal layer for the plate electrode; and   a fuse metal layer formed of the same material as that of the upper metal layer for the plate electrode on the dielectric layer in the fuse region.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein the lower metal layer for the plate electrode comprises a titanium nitride layer deposited by chemical vapor deposition. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the upper metal layer for the plate electrode and the fuse metal layer comprise a titanium nitride layer deposited by physical vapor deposition.