Vapor delivery system useful with ion sources and vaporizers for use in such system

Abstract

Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

1 . A flow interface device in the form of a thermally conductive valve block which defines at least one vapor passage, the passage associated with at least first and second vapor transfer interfaces, one interface comprising a vapor inlet located to receive vapor from a vaporizer of solid feed material and communicating with an inlet portion of the passage, and the other interface comprising a vapor outlet for delivery of vapor from an outlet portion of the passage to a vapor-receiving device, the valve block having at least one vapor valve and constructed to heat the passage and deliver vapor from the vaporizer to the vapor-receiving device. 
   
   
       2 . The flow interface device of  claim 1  in which the vapor valve is a flow control valve for regulating the flow of vapor to an ion source. 
   
   
       3 . The flow interface device of  claim 1  in which a vapor valve is a valve system that enables vapor flow to an ion source of vapor entering through the vapor inlet and another flow to the ion source. 
   
   
       4 . The flow interface device of  claim 3  in which another flow enabled is flow of vapor from another vapor inlet defined by the valve block. 
   
   
       5 . The flow interface device of  claim 3  in which another flow enabled is flow to the ion source is flow of a reactive cleaning gas. 
   
   
       6 . The flow interface device of  claim 3  including at least two valve systems in the valve block, a first valve system enabling vapor flow to the ion source of vapor entering through said vapor inlet, and enabling flow to the ion source of vapor from another vapor inlet defined by the valve block, and a second selector valve system enabling flow of vapor from a vapor inlet defined by the valve block, or, alternatively, closing all vapor flow and permitting flow to the ion source of a reactive cleaning gas. 
   
   
       7 . The flow interface device of  claim 1  in which at least two vapor inlets defined by the valve block are located to receive vapor from respective vaporizers, the two vapor inlets associated with respective inlet passage portions, flows through the inlet passage portions being enabled by the first valve system, the inlet passage portions merging following the first valve system into a common passage portion, and the second valve system is arranged to selectively enable flow through the common passage portion to the vapor-receiving device, or, alternatively, flow of the reactive cleaning gas to the vapor-receiving device. 
   
   
       8 . The flow interface device of  claim 7  in which a further valve comprising a flow control valve is associated with the common passage portion for regulating flow of vapor to the vapor-receiving device. 
   
   
       9 . The flow interface device of  claim 3  in which the valve system comprises a spool valve acting as a selector to permit only one of said flows at a time. 
   
   
       10 . The flow interface device of  claim 1  in which the valve block is associated with a heater controlled to maintain the temperature of the valve block higher than that of a vaporizer from which it receives vapor. 
   
   
       11 . The flow interface device of  claim 1  in which the valve block defines a mounting region constructed to receive and support a vaporizer. 
   
   
       12 . The flow interface device of  claim 11  including thermal insulation insulating the valve block from the vaporizer to define respective separate thermal control regions to enable maintenance of valve block temperature higher than that of the vaporizer. 
   
   
       13 . The flow interface device of  claim 11  having a connector constructed, with mounting motion of a vaporizer with respect to the valve block, to mate with a matching connector of the vaporizer, for connecting the vaporizer electrically to a heating control system. 
   
   
       14 . The flow interface device of  claim 11  in which the valve block defines a receptacle having support surfaces for receiving a support projection of a vaporizer to thereby support the vaporizer during vaporizer heating and vapor transfer. 
   
   
       15 . The flow interface device of  claim 14  in which the support projection is a lateral projection defining a lateral vapor flow passage, the projection having a peripheral side surface and an end surface, and peripheral and end thermal insulation portions are provided to enable thermal isolation of the valve block from the projection of the vaporizer. 
   
   
       16 . The flow interface device of  claim 14  in which the receptacle of the valve block is constructed to receive the support projection of the vaporizer by linear sliding motion of the projection, the flow interface device mounting an electrical connector that is constructed, with mounting motion of a vaporizer relative to the valve block, to slideably mate with a matching electrical connector of the vaporizer for connecting the vaporizer electrically to a control and heating system. 
   
   
       17 . The flow interface device of  claim 16  in which the electrical connector includes a pneumatic connector for supplying controllable compressed air to the vaporizer for selectively actuating a valve of the vaporizer. 
   
   
       18 . The flow interface device of  claim 1  in which the vapor valve is a flow control valve, the interface device being associated with a power supply and heating system for receiving sensed temperature signal from a vaporizer and for applying electric heating current to the vaporizer to cause the vaporizer to heat sufficiently to produce vapor of the solid feed material of pressure greater than that required by the vapor-receiving device, and in the range that enables the flow control valve to regulate vapor flow to the ion source. 
   
   
       19 . The flow interface device of  claim 1  combined with a vaporizer, the vaporizer containing solid feed material capable of producing ionizable vapor. 
   
   
       20 . The flow interface device of  claim 1  combined with a vapor-receiving device in the form of an ion source constructed to produce ions for use in semiconductor manufacture. 
   
   
       21 . The flow interface device of  claim 1  in combination with an ion beam implanter in which the vapor-receiving device comprises a high voltage ion source capable of ionizing vapor to produce a beam of ions for ion implantation. 
   
   
       22 . The flow interface device of  claim 19  in which the solid feed material comprises a cluster compound capable of producing vapor for the production of cluster ions. 
   
   
       23 . The flow interface device of  claim 22  in which the cluster compound comprises a cluster boron compound. 
   
   
       24 . The flow interface device of  claim 23  in which the compound comprises a borane or a carborane. 
   
   
       25 . The flow interface device of  claim 24  in which the compound comprises B 10 H 14 , B 18 H 22 , C 2 B 10 H 12  or C 4 B 18 H 22 . 
   
   
       26 . The flow interface device of  claim 22  in which the cluster compound comprises a cluster carbon compound. 
   
   
       27 . The flow interface device of  claim 26  in which the cluster compound comprises C 14 H 14 , C 16 H 10 , C 16 H 12 , C 16 H 20 , C 18 H 14 ; or C 18 H 38 . 
   
   
       28 . The flow interface device of  claim 22  in which the cluster compound comprises a compound for N-Type doping. 
   
   
       29 . The flow interface device of  claim 28  in which the compound comprises an arsenic, phosphorus or antimony cluster compound. 
   
   
       30 . The flow interface device of  claim 29  in which the compound comprises an arsenic or phosphorus compound capable of forming ions of the form A n H x   +  or A n RH x   + , where n and x are integers with n greater than 4 and x greater than or equal to 0, and A is either As or P and R is a molecule not containing phosphorus or arsenic and which is not injurious to the implantation process. 
   
   
       31 . The flow interface device of  claim 29  in which the compound comprises a phosphorus compound selected from the group consisting of phosphanes, organophosphanes and phosphides. 
   
   
       32 . The flow interface device of  claim 29  in which the compound is P 7 H 7 . 
   
   
       33 . The flow interface device of  claim 29  in which the compound comprises an antimony compound that comprises a trimethylstibine. 
   
   
       34 . The flow interface device of  claim 33  in which the compound comprises S b (CH 3 )C 3 . 
   
   
       35 . The flow interface device and vaporizer of  claim 22  in combination with an ion beam implanter in which the vapor-receiving device comprises a high voltage ion source capable of ionizing vapor produced from the solid feed material for ion implantation. 
   
   
       36 . The combination of the flow interface device of  claim 1  with a vapor-receiving-device in the form of a high voltage ion source and the flow-interface device is mounted for support upon an electrical insulator. 
   
   
       37 . The combination of  claim 36  in which the insulator is an insulator bushing that also supports the ion source to which the vapors are delivered. 
   
   
       38 . The flow interface device of  claim 36  in combination with an ion beam implanter in which the vapor-receiving device comprises a high voltage ion source capable of ionizing the vapor to produce a beam of ions for ion implantation. 
   
   
       39 . The flow interface device of  claim 1  including a gas purge system for removing vapor from the vapor inlet passage of the valve block prior to disconnecting the vaporizer from the valve block. 
   
   
       40 . The flow interface device of  claim 1  in which the valve block defines a delivery passage for a process gas. 
   
   
       41 . The flow interface device of  claim 40  constructed so that the process gas is selectively directed through a passage through which reactive cleaning gas is at other times directed. 
   
   
       42 . The flow interface device of  claim 1  in which the valve block includes a delivery extension defining at least two flow paths to the vapor-receiving device, at least one of which is constructed to convey vapor from solid feed material and another is constructed to deliver a process gas or a reactive cleaning gas. 
   
   
       43 . The flow interface device of  claim 2  in which the flow control valve is a throttle-fly type valve. 
   
   
       44 . The flow interface device of  claim 4  in which the valve system permits only one of the vapor flows at a time. 
   
   
       45 . The flow interface device of  claim 44  in which the valve system comprises a spool valve. 
   
   
       46 . The flow interface device of claim  420 , for use with vaporizers containing the same feed material, comprising a valve system that permits flow from at least two vaporizers simultaneously. 
   
   
       47 . The flow interface of  claim 46  in which the valve system is constructed for a second mode of action in which the valve system permits only one of the vapor flows at a time. 
   
   
       48 . A flow interface device for an ion source constructed for use as the ion source for an ion beam implanter, the interface device being in the form of a thermally conductive valve block which defines at least one vapor passage, the passage associated with at least first and second vapor transfer interfaces, one interface comprising a vapor inlet located to receive vapor from a vaporizer and communicating with an inlet portion of the passage, and the other interface comprising a vapor outlet for delivery of vapor from an outlet portion of the passage to the ion source, the valve block constructed to heat the passage and deliver vapor from the vaporizer to the ion source, a flow control valve associated with the passage for regulating the flow of vapor to the ion source, and a valve system that enables vapor flow to the ion source of vapor entering through the inlet and another enables flow to the ion source. 
   
   
       49 . The flow interface device of  claim 48  associated with a power supply and control system for causing the vaporizer to heat sufficiently to produce vapor of the solid feed material of pressure greater than that required by the ion source, and in the range controllable by the flow control valve. 
   
   
       50 . The flow interface device of  claim 48  in which the flow control valve is a butter-fly type valve. 
   
   
       51 . The flow interface device of  claim 48  in which another flow enabled is flow of vapor from another vapor inlet defined by the valve block. 
   
   
       52 . The flow interface device of  claim 48  in which another flow enabled is flow to the ion source of a reactive cleaning gas. 
   
   
       53 . The flow interface device of  claim 48  including at least two valve systems in the valve block that enable flow, a first valve system enabling vapor flow to the ion source of vapor entering through the vapor inlet, and enabling another flow to the ion source of vapor from another vapor inlet defined by the valve block, and a selector valve system enabling flow of vapor from a vapor inlet defined by the valve block, or. alternatively, closing all vapor flow and enabling flow to the ion source of a reactive cleaning gas. 
   
   
       54 . The flow interface device of  claim 53  in which vapor inlet passages associated with at least two vapor inlets located to receive vapor from respective vaporizers are controlled by the first valve system following which the inlet passage portions merge into a common passage, and the second valve system selectively controls flow through the common passage portion to the ion source, or alternatively flow of the reactive cleaning gas to the ion source, the flow control valve being associated with the common passage for regulating flow of vapor to the ion source. 
   
   
       55 . The flow interface device of  claim 54  in which a valve comprises a spool valve. 
   
   
       56 . The flow interface device of  claim 48  in which the valve block is associated with a heater controlled to maintain the temperature of the valve block higher than that of a vaporizer from which it receives vapor. 
   
   
       57 . A method of producing vapor employing the device or combination of  claim 1 . 
   
   
       58 . The method as recited in  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising a cluster molecule. 
   
   
       59 . The method of  claim 58  employing an ion source capable of ionizing vapor produced from the solid material. 
   
   
       60 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising C 14 H 14 , C 16 H 10 , C 16 H 12 , C 16 H 2O , C 18 H 14  or C 18 H 38 . 
   
   
       61 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising compound for N-Type doping. 
   
   
       62 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising an arsenic, phosphorus or antimony cluster compound. 
   
   
       63 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising an arsenic or phosphorus compound capable of forming ions of the form A n H x   +  or A x RH x   + , where n and x are integers with n greater than 4 and x greater than or equal to 0, and A is either As or P and R is a molecule not containing phosphorus or arsenic and which is not injurious to an ion implantation process. 
   
   
       64 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising a phosphorus compound selected from the group consisting of phosphanes, organophosphanes and phosphides. 
   
   
       65 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising P 7 H 7 . 
   
   
       66 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising an antimony compound that comprises a trimethylstibine. 
   
   
       67 . The method of  claim 57  further including the step of employing flow interface devices in generation, delivery and utilization of vapor from solid material comprising 
   
   
       68 . The method of treating a semiconductor device or semiconductor material comprising using the flow interface device or vapor delivery system of  claim 1  to produce cluster ions, and using the ions in the treatment. 
   
   
       69 . The method of  claim 68  in which the method of treating comprises ion implantation. 
   
   
       70 . The method of  claim 69  in which the method of treating comprises ion beam implantation. 
   
   
       71 . A system for producing vapor along a flow path from a group of vaporizers at mounting stations of a vapor delivery system comprising subgroups of vaporizers, one of the subgroups containing at least two vaporizers containing the same solid feed material and
 another group containing at least one vaporizer containing a different solid feed material, at least one vaporizer of the group containing material comprising a cluster molecule, the system including a control system enabling the subgroup of vaporizers containing the same solid feed material to simultaneously provide vapor along the path and preventing simultaneous flow through the path of vapor from the other subgroup.   
   
   
       72 . The system of  claim 71  in which the system is an electro-mechanical control system. 
   
   
       73 . The system of  claim 71  including a vapor flow control that includes two variable conductance flow devices in series along the flow path, the down-stream device comprising a throttle valve and the up-stream device enabling adjustment of pressure of the vapor reaching the throttle valve. 
   
   
       74 . A system for producing vapor along a flow path from a group of vaporizers at mounting stations of a vapor delivery system comprising at least two vaporizers containing the same solid feed material of a cluster molecule wherein a control system is constructed to enable the two vaporizers to operate simultaneously. 
   
   
       75 . The system of  claim 74  including a vapor flow control that includes two variable conductance flow devices in series along the flow path, the down-stream device comprising a throttle valve and the up-stream control enabling adjustment of pressure of the vapor reaching the throttle valve. 
   
   
       76 . The method of producing ions for implantation comprising ionizing vapor received from  claim 71 . 
   
   
       77 . The method of  claim 76  in which ions produced are formed into a beam for ion implantation. 
   
   
       78 . A system for producing vapor along a flow path from a vaporizer containing material comprising a cluster molecule comprising a vapor flow control that includes two variable conductance flow devices in series along the flow path, the downstream device comprising a throttle valve and the up-stream control enabling adjustment of pressure of the vapor reaching the throttle valve.