Apparatus for Producing Trichlorosilane

Abstract

An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls in order from the inside, and the gas supply section and the gas discharge section are connected to the reaction passageway.

1 . An apparatus for producing trichlorosilane, comprising:
 a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride;   a heating mechanism that heats the interior of the reaction vessel;   a gas supply section that supplies the supply gas in the reaction vessel; and   a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein   a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls in order from the inside, and   the gas supply section and the gas discharge section are connected to the reaction passageway.   
   
   
       2 . The apparatus for producing trichlorosilane according to  claim 1 , comprising:
 a plurality of gas discharge sections,   the gas supply section being in communication with the innermost small space of the plurality of small spaces, and the plurality of gas discharge sections being connected to the outermost small space.   
   
   
       3 . The apparatus for producing trichlorosilane according to  claim 1 , comprising:
 a storage container that stores the reaction vessel and the heating mechanism, and   an argon supply mechanism that supplies argon in the storage container.   
   
   
       4 . The apparatus for producing trichlorosilane according to  claim 1 , wherein
 a member forming the reaction vessel is formed of carbon.   
   
   
       5 . The apparatus for producing trichlorosilane according to  claim 4 , wherein
 a surface of the carbon is coated with silicon carbide.   
   
   
       6 . The apparatus for producing trichlorosilane according to  claim 3 , wherein
 a member forming the reaction vessel is formed of carbon.   
   
   
       7 . The apparatus for producing trichlorosilane according to  claim 6 , wherein
 a surface of the carbon is coated with silicon carbide.   
   
   
       8 . The apparatus for producing trichlorosilane according to  claim 2 , comprising:
 a storage container that stores the reaction vessel and the heating mechanism, and   an argon supply mechanism that supplies argon in the storage container.   
   
   
       9 . The apparatus for producing trichlorosilane according to  claim 2 , wherein
 a member forming the reaction vessel is formed of carbon.   
   
   
       10 . The apparatus for producing trichlorosilane according to  claim 9 , wherein
 a surface of the carbon is coated with silicon carbide.   
   
   
       11 . The apparatus for producing trichlorosilane according to  claim 8 , wherein
 a member forming the reaction vessel is formed of carbon.   
   
   
       12 . The apparatus for producing trichlorosilane according to  claim 11 , wherein
 a surface of the carbon is coated with silicon carbide.