Insulating film and semiconductor device including the same

Abstract

It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]−[H]}/2≦1.0×10 21 cm −3 .

1 . An insulating film comprising
 an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen,   the nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfying the following relationship:
   {[N]−[H]}/2≦1.0×10 21  cm −3 . 
   
   
   
       2 . The insulating film according to  claim 1 , wherein the nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship:
   {[N]−[H]}/2≦3.0×10 20  cm −3 .   
   
   
       3 . The insulating film according to  claim 1 , wherein the nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film are equal to each other. 
   
   
       4 . The insulating film according to  claim 1 , wherein:
 the nitrogen amount [N] in the oxide dielectric film satisfies the following relationship:
   6.4×10 19  cm −3 ≦[N]≦1.6×10 22  cm −3 ; and 
   the hydrogen amount [H] in the oxide dielectric film satisfies the following relationship:
   6.4×10 19  cm −3 ≦[H]≦1.6×10 22  cm −3 . 
   
   
   
       5 . The insulating film according to  claim 1 , wherein:
 the nitrogen amount [N] in the oxide dielectric film satisfies the following relationship:
   3.0×10 20  cm −3 ≦[N]≦2.0×10 21  cm −3 ; and 
   the hydrogen amount [H] in the oxide dielectric film satisfies the following relationship:
   3.0×10 20  cm −3 ≦[H]≦2.0×10 21  cm −3 . 
   
   
   
       6 . The insulating film according to  claim 1 , wherein:
 the nitrogen amount in the oxide dielectric film is equal to or larger than the hydrogen amount; and   each hydrogen atom is coupled with a nitrogen atom through one atom of the metal.   
   
   
       7 . An insulating film comprising
 an amorphous oxide dielectric film containing a quadrivalent metal, a trivalent metal, and hydrogen,   the trivalent metal amount [III metal] and the hydrogen amount [H] in the oxide dielectric film satisfying the following relationship:
   {[ III  metal]−[H]}/2≦1.0×10 21  cm −3 . 
   
   
   
       8 . The insulating film according to  claim 7 , wherein the trivalent metal amount [III metal] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship:
   {[ III  metal]−[H]}/2≦3.0×10 20  cm −3 .   
   
   
       9 . The insulating film according to  claim 7 , wherein:
 the trivalent metal amount in the oxide dielectric film is equal to or larger than the hydrogen amount; and   the trivalent metal is located adjacent to each hydrogen atom.   
   
   
       10 . An insulating film comprising
 an amorphous oxide dielectric film containing a quadrivalent metal, a divalent metal, and hydrogen,   the divalent metal amount [II metal] and the hydrogen amount [H] in the oxide dielectric film satisfying the following relationship:
   {2×[ II  metal]−[H]}/2≦1.0×10 21  cm −3 . 
   
   
   
       11 . The insulating film according to  claim 10 , wherein the divalent metal amount [II metal] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship:
   {2×[ II  metal]−[H]}/2≦3.0×10 20  cm −3 .   
   
   
       12 . The insulating film according to  claim 10 , wherein:
 the hydrogen amount in the oxide dielectric film is equal to or smaller than twice the divalent metal amount; and   atoms of the divalent metal are located adjacent to the respective hydrogen atoms.   
   
   
       13 . An insulating film comprising
 an amorphous oxide dielectric film containing a trivalent metal, a divalent metal, and hydrogen,   the divalent metal amount [II metal] and the hydrogen amount [H] in the oxide dielectric film satisfying the following relationship:
   {[ II  metal]−[H]}/2≦1.0×10 21  cm −3 . 
   
   
   
       14 . The insulating film according to  claim 13 , wherein the divalent metal amount [II metal] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship:
   {[ II  metal]−[H]}/2≦3.0×10 20  cm −3 .   
   
   
       15 . The insulating film according to  claim 13 , wherein:
 the divalent metal amount in the oxide dielectric film is equal to or larger than the hydrogen amount; and   atoms of the divalent metal are located adjacent to the respective hydrogen atoms.   
   
   
       16 . A semiconductor device comprising:
 a semiconductor substrate;   a source region and a drain region provided at a distance from each other in the semiconductor substrate;   the insulating film according to  claim 1 , provided on a portion of the semiconductor substrate, the portion being a channel region between the source region and the drain region; and   a gate electrode provided on the insulating film.   
   
   
       17 . A semiconductor device comprising:
 a first electrode;   the insulating film according to  claim 1 , provided on the first electrode; and   a second electrode provided on the insulating film.   
   
   
       18 . A semiconductor device comprising:
 a semiconductor substrate;   a source region and a drain region provided at a distance from each other in the semiconductor substrate;   a first insulating film provided on a portion of the semiconductor substrate, the portion being a channel region between the source region and the drain region;   a first electrode provided on the first insulating film;   a second insulating film provided on the first electrode; and   a second electrode provided on the second insulating film,   at least one of the first insulating film and the second insulating film being the insulating film according to  claim 1 .   
   
   
       19 . A semiconductor device comprising:
 a semiconductor substrate;   a source region and a drain region provided at a distance from each other in the semiconductor substrate;   a first insulating film provided on a portion of the semiconductor substrate, the portion being a channel region between the source region and the drain region;   a charge trapping film provided on the first insulating film;   a second insulating film provided on the charge trapping film; and   an electrode provided on the second insulating film,   at least one of the first insulating film, the charge trapping film, and the second insulating film being the insulating film according to  claim 1 .