Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

Abstract

A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58 . In the main body portion 56 , a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66 . A substrate 68 is placed on the supporting portion 58 . The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

1 . A thermal treatment method comprising:
 carrying a substrate into a furnace;   heat-treating the substrate by using an oxygen in the furnace with the substrate being supported by a supporting portion formed from a silicon plate-like member, a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film; and   carrying the heat-treated substrate out of the furnace,   wherein the amorphous silicon oxide film coating the substrate-placing face of the supporting portion is formed by the heat-treating.   
   
   
       2 . A thermal treatment method according to  claim 1 ,
 wherein a thickness of the supporting portion is not less than twice a thickness of the substrate and not more than 10 mm, a diameter of the supporting portion is smaller than a diameter of the substrate.   
   
   
       3 . A thermal treatment method according to  claim 2 ,
 wherein the thickness of the supporting portion is from 3 mm to 10 mm.   
   
   
       4 . A thermal treatment method according to  claim 2 ,
 wherein the diameter of the supporting portion is from ⅓ to ⅚ of the diameter of the substrate.   
   
   
       5 . A thermal treatment method according to  claim 2 ,
 wherein the diameter of the supporting portion is ⅔ of the diameter of the substrate.   
   
   
       6 . A thermal treatment method according to  claim 2 ,
 wherein the heat-treating is performed with the supporting portion being supported by a main body portion formed from a silicon carbide in the furnace.   
   
   
       7 . A thermal treatment method according to  claim 2 ,
 wherein the heat-treating is performed with the supporting portion being supported by a plate, the plate is supported by a main body portion, a diameter of the plate is larger than a diameter of the supporting portion in the furnace.   
   
   
       8 . A thermal treatment method according to  claim 2 ,
 wherein the heat-treating is performed with the supporting portion being supported by a plate formed from a silicon carbide, the plate is supported by a main body portion formed from a silicon carbide, a diameter of the plate is larger than a diameter of the supporting portion in the furnace.   
   
   
       9 . A method for manufacturing a substrate, comprising:
 carrying a substrate into a furnace;   heat-treating the substrate by using an oxygen in the furnace with the substrate being supported by a supporting portion formed from a silicon plate-like member, a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film, a thickness of the supporting portion is not less than twice a thickness of the substrate and not more than 10 mm, a diameter of the supporting portion is smaller than a diameter of the substrate; and   carrying the heat-treated substrate out of the furnace,   wherein the amorphous silicon oxide film coating the substrate-placing face of the supporting portion is formed by the heat-treating.   
   
   
       10 . A method for manufacturing a SIMOX substrate, comprising:
 implanting oxygen ions into a substrate; and   heat-treating the substrate into which the oxygen ions have been implanted in an oxygen atmosphere with the substrate being supported by a supporting portion formed from a silicon plate-like member, a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film,   wherein the amorphous silicon oxide film coating the substrate-placing face of the supporting portion is formed by the heat-treating.