Method of producing semiconductor device

Abstract

Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

1 . A method of producing a semiconductor device, comprising:
 coating a surface of an inner wall of a processing space and a buffer space with a coating film, the processing space being defined by a reaction tube in which a substrate is to be processed, and the buffer space is provided at an inner wall of the reaction tube and partitioned from the processing space, by
 heating the processing space to a first temperature, and 
 supplying a first processing gas and a second processing gas to the processing space without activating by a plasma excitation, the first processing gas being supplied to the processing space through the buffer space to form the coating film on the surface of the inner wall of the processing space and the buffer space; and 
   forming a thin film on the substrate by
 placing the substrate in the processing space, 
 heating the processing space to a second temperature lower than the first temperature, 
 exposing the substrate to the first processing gas activated by a plasma excitation, 
 removing the first processing gas from the processing space, 
 exposing the substrate to the second processing gas, 
 removing the second processing gas from the processing space, and 
   alternately repeating the steps of exposing the substrate to the first processing gas and exposing the second processing gas a plurality of times to form the thin film on the substrate.   
   
   
       2 . A method of producing a semiconductor device, comprising:
 coating a surface of an inner wall of a processing space with a coating film by supplying at least two different processing gases to the processing space to form the coating film on the surface of the inner wall of the processing space; and   forming a thin film on the substrate accommodated in the processing space by repeatedly performing a predetermined cycle, each predetermined cycle including
 applying alternating pulses of different processing gases so that each processing gases are not mixed with each other in the processing space, 
   wherein   processing gases supplied in the processing space in the coating step and the forming step are same gases.   
   
   
       3 . The method of producing a semiconductor device as recited in  claim 2 , wherein
 the processing space is defined by a reaction tube that provides a space in which a substrate is to be processed,   an inner wall of the reaction tube is provided with a buffer space partitioned from the processing space,   at least one of the processing gases is provided in a buffer space to expose the substrate, through the buffer space, and   the coating film is also formed on a surface of an inner wall of the buffer space.   
   
   
       4 . The method of producing a semiconductor device as recited in  claim 2 , wherein
 at least one of the processing gases is activated by a plasma excitation when coating the surface of the inner wall of the processing space with a coating film, and   no processing gas is activated by the plasma excitation when forming the thin film on the substrate.   
   
   
       5 . The method of producing a semiconductor device as recited in  claim 4 , wherein
 the processing space is heated to a first temperature when coating the surface of the inner wall of the processing space with a coating film, and   the processing space is heated to a second temperature lower than the first temperature when forming the thin film on the substrate.   
   
   
       6 . A method of producing a semiconductor device, comprising:
 forming a thin film on a substrate accommodated in a processing space by repeatedly performing a predetermined cycle, each predetermined cycle including,
 applying alternating pulses of a first processing gas and a second processing gas so that each processing gases are not mixed with each other in the processing space, 
 supplying a cleaning gas in the processing space, and 
 coating a surface of an inner wall of the processing space with a coating film by supplying the first processing gas and the second processing gas to the processing space to form the coating film on the surface of the inner wall of the processing space, 
   wherein the steps of forming the thin film, supplying a cleaning gas, and coating the surface of the inner wall of the processing space are sequentially performed.