US2009179199A1PendingUtilityA1

Field effect transistor with amorphous oxide layer containing microcrystals

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Assignee: CANON KKPriority: Nov 10, 2004Filed: Mar 18, 2009Published: Jul 16, 2009
Est. expiryNov 10, 2024(expired)· nominal 20-yr term from priority
Inventors:Masafumi SanoKatsumi NakagawaHideo HosonoToshio KamiyaKenji Nomura
H10P 34/42H10P 14/3454H10P 14/3434H10P 14/3426H10P 14/2922H10P 14/22H10D 30/6757H10D 30/6755H10D 30/6756H10D 62/80H10D 99/00H10D 86/441H10D 86/423H10D 86/60
60
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Claims

Abstract

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Claims

exact text as granted — not AI-modified
1 . An amorphous oxide comprising a microcrystal and having an electron carrier concentration of less than 10 18 /cm 3 , wherein the grain boundary of the microcrystal is covered with an amorphous structure 
   
   
       2 . The amorphous oxide according to  claim 1 , comprising at least one element selected from the group consisting of In, Zn and Sn. 
   
   
       3 . The field-effect transistor according to  claim 1 , wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In. 
   
   
       4 . The amorphous oxide according to  claim 1 , comprising In, Ga, and Zn. 
   
   
       5 . (canceled) 
   
   
       6 . (canceled) 
   
   
       7 . (canceled) 
   
   
       8 . An amorphous oxide wherein electron mobility increases as electron carrier concentration increases whose composition changes in a layer thickness direction and having an electron carrier concentration of less than 10 18 /cm 3 . 
   
   
       9 . The amorphous oxide according to  claim 8 , wherein the amorphous oxide contains at least one element selected from the group consisting of In, Zn and Sn. 
   
   
       10 . The field-effect transistor according to  claim 8 , wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In. 
   
   
       11 . The amorphous oxide according to  claim 8 , wherein the amorphous oxide contains In, Ga and Zn. 
   
   
       12 . (canceled) 
   
   
       13 . (canceled) 
   
   
       14 . An amorphous oxide whose composition changes in a layer thickness direction, wherein electron mobility increases as electron carrier concentration increases. 
   
   
       15 . (canceled) 
   
   
       16 . An amorphous oxide comprising one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F and having an electron carrier concentration of less than 10 18 /cm 3 . 
   
   
       17 . The amorphous oxide according to  claim 16 , comprising at least one element selected from the group consisting of In, Zn and Sn. 
   
   
       18 . The field-effect transistor according to  claim 16 , wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In. 
   
   
       19 . The amorphous oxide according to  claim 16 , comprising In, Zn and Ga. 
   
   
       20 . An amorphous oxide comprising at least one element selected from group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn, and F, wherein electron mobility increases as electron carrier concentration increases. 
   
   
       21 . (canceled)

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