Silicon Carrier Including An Integrated Heater For Die Rework And Wafer Probe

Abstract

Forming a silicon carrier interposer having an integrated heater includes forming a multi-layer silicon member having a main body portion including a first surface, a second surface and an intermediate portion, and attaching first and second electronic components to the first surface of the multi-layer silicon member. A plurality of vias extend between the first surface and the second surface and are adapted to provide an interface between the first and second electronic components and a substrate. In addition, a plurality of heating elements are integrated into the main body portion of the multi-layer silicon member. The heating elements are selectively activated to create a reflow of solder to facilitate one of an attachment of one of the first and second electronic components to the multi-layer silicon member and a detachment of the one of the first and second electronic components from the multi-layer silicon member.

1 . A method of forming a silicon carrier interposer including an integrated heater, the method comprising:
 forming a multi-layer silicon member including a main body portion having a first surface, a second surface and an intermediate portion;   attaching a first electronic component to the first surface of the multi-layer silicon member, the first electronic component including a plurality of connector members that establish a first bond electrically interconnecting the first electronic component to the silicon interposer;   attaching a second electronic component to the first surface of the multi-layer silicon member, the second electronic component including a plurality of connector members that establish a second bond electrically interconnecting the second electronic component to the silicon interposer;   creating a plurality of vias in the main body portion, the plurality of vias extending between the first surface and the second surface, the plurality of vias being adapted to provide an interface between the first and second electronic components and a substrate;   arranging a plurality of connector members on the second surface of the multi-layer silicon member, each of the plurality of connector members being positioned at a corresponding one of the plurality of vias; and   integrating a plurality of heating elements into the main body portion of the multi-layer silicon member, the plurality of heating elements being selectively activated to create a reflow of solder to facilitate one of an attachment of one of the first and second electronic components to the multi-layer silicon member and a detachment of the one of the first and second electronic components from the multi-layer silicon member.   
     
     
         2 . The method of  claim 1 , wherein integrating a plurality of heating elements into the main body portion of the multi-layer silicon member comprises positioning a first heating element proximate to the first electronic component and positioning a second heating element proximate to the second electronic component, the first heating element being selectively activated to loosen the first bond and the second heating element being selectively activated to loosen the second bond.