Exposure mask

Abstract

An exposure mask provided with a semi-transparent film, capable of forming a resist in which a convex portion is not formed in an end portion and the end portion has gentle shape. In an exposure mask having a first region and a second region having different phase and transmittance with respect to exposure light, the phase difference Δθ with respect to exposure light which transmits though the first region and the second region and the transmittance n of the second region with respect to exposure light are defined so as to satisfy following formula 1. Δθ≦arccos(−√ n /2)  [Formula 1] Accordingly, a resist having regions with different thicknesses and having gentle shape in an edge can be formed. By performing a process such as etching with this resist, regions having different thicknesses can be formed in a self-aligned manner.

1 . A semiconductor device manufactured using an exposure mask wherein a phase difference Δθ of i-line (365 nm) which transmits through a transparent region and a semi-transparent region of the exposure mask and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1.
   Δθ≦arccos(−√ n/ 2)  [Formula 1]   
   
   
       2 . A semiconductor device manufactured using an exposure mask wherein a phase difference Δθ of i-line (365 nm) which transmits through a transparent region and a semi-transparent region of the exposure mask and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 2, and the transmittance n is in the range of 0.15 to 0.8.
   Δθ≦arccos(−√ n/ 2)  [Formula 2]   
   
   
       3 . A semiconductor device manufactured using an exposure mask, wherein the exposure mask comprising:
 a light-transmitting substrate;   a semi-transparent film provided over the light-transmitting substrate; and   a light-shielding film provided over the semi-transparent film,   
     wherein a phase difference Δθ between the semi-transparent film and the light-transmitting substrate with respect to i-line (365 nm) and a transmittance n of the semi-transparent film with respect to the i-line (365 nm) satisfy Formula 3.
   Δθ≦arccos(−√ n/ 2)  [Formula 3] 
 
   
   
       4 . The semiconductor device according to  claim 3 , wherein light-shielding film comprises a Cr film. 
   
   
       5 . The semiconductor device according to  claim 3 , wherein an alloy containing Mo and Si, an alloy containing Cr and Si, or Cr is used as a material for the semi-transparent film. 
   
   
       6 . The semiconductor device according to  claim 3 , wherein the transmittance of the semi-transparent film with respect to the i-line (365 nm) is in the range of 0.15 to 0.8. 
   
   
       7 . A semiconductor device manufactured using an exposure mask, wherein the exposure mask comprising:
 a light-transmitting substrate;   a semi-transparent film provided over the light-transmitting substrate; and   a light-shielding film provided over the semi-transparent film,   
     wherein a phase difference between the semi-transparent film and the light-transmitting substrate with respect to i-line (365 nm) is in the range of −90° to 90°. 
   
   
       8 . The exposure mask according to  claim 7 , wherein light-shielding film comprises a Cr film. 
   
   
       9 . The exposure mask according to  claim 7 , wherein an alloy containing Mo and Si, an alloy containing Cr and Si, or Cr is used as a material for the semi-transparent film. 
   
   
       10 . The exposure mask according to  claim 7 , wherein the transmittance of the semi-transparent film with respect to the i-line (365 nm) is in the range of 0.15 to 0.8.