Methods of Making, Positioning and Orienting Nanostructures, Nanostructure Arrays and Nanostructure Devices

Abstract

Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided. In one embodiment, a substrate is disclosed which comprises a first substrate region and a nanowire element attached to the first substrate region at a first position, the nanowire element comprising a first semiconductive region and a second region disposed between the first semiconductive region and the first position, wherein the second region comprises a material that is etchable under conditions that do not substantially etch the first semiconductive region.

1 . A nanowire that has been etched from a substrate, the nanowire comprising a first semiconductive region and a second region comprising a material that is etchable under conditions that do not substantially etch the first semiconductive region, wherein the second region comprises a substantially faceted etched end of the nanowire. 
     
     
         2 . The nanowire of  claim 1 , wherein the first semiconductive region and the second region of the nanowire are differently doped. 
     
     
         3 . The nanowire of  claim 2 , wherein the first semiconductive region and the second region of the nanowire comprise the same semiconductive material. 
     
     
         4 . The nanowire of  claim 3 , wherein the first semiconductive region and the second region of the nanowire comprise silicon. 
     
     
         5 . The nanowire of  claim 1 , wherein the first semiconductive region comprises germanium and the second region of the nanowire comprises silicon. 
     
     
         6 . The nanowire of  claim 1 , wherein the first semiconductive region comprises one or more P-N junctions. 
     
     
         7 . A flexible substrate comprising the nanowire of  claim 1  deposited thereon. 
     
     
         8 . A population of free-standing inorganic nanowires dispersed in solution, each of the nanowires in said population having substantially the same length. 
     
     
         9 . The population of nanowires of  claim 8 , wherein each of the nanowires in the population have an etched end. 
     
     
         10 . The population of nanowires of  claim 9 , wherein the nanowires in the population each include at least one P-N junction along a length of the nanowires. 
     
     
         11 . The population of nanowires of  claim 9 , wherein each of the nanowires in the population have a substantially faceted etched end.