Semiconductor Device and Method of Forming the Device Using Sacrificial Carrier

Abstract

A semiconductor device is made by forming contact pads on a sacrificial carrier. The contact pads may be formed on a pillar. A semiconductor die is mounted to electrically connect to the contact pads with solder bumps or wire bonds. The semiconductor die is encapsulated with molding compound. The sacrificial carrier is removed. A backside interconnect structure has a first conductive layer formed over the molding compound to electrically connect to the contact pads. A first insulating layer is formed over the first conductive layer. A portion of the first insulating layer is removed to expose the first conductive layer. Solder material is deposited in electrical contact with the first conductive layer. The solder material is reflowed to form a solder bump. A wire bond electrically connects to a contact pad. A front-side interconnect structure can be formed through the molding compound to the contact pads.

1 . A method of making a semiconductor device, comprising:
 providing a first sacrificial metal carrier;   forming a photoresist layer over the first sacrificial metal carrier;   forming openings in the photoresist layer extending to the first sacrificial metal carrier;   forming conductive pillars in the openings of the photoresist layer;   forming a plurality of contact pads over the conductive pillars, the contact pads being selectively electroplated through the openings in the photoresist layer onto the conductive pillars to provide precise alignment of the contact pads for electrical interconnect, the conductive pillars and first sacrificial metal carrier providing a plating current path for electroplating the contact pads;   removing the photoresist layer;   mounting a first semiconductor die to electrically connect to the contact pads;   encapsulating the first semiconductor die, contact pads, and conductive pillars with molding compound;   removing the first sacrificial metal carrier;   mounting a second sacrificial carrier over a first side of the molding compound opposite the contact pads;   forming a first conductive layer over a second side of the molding compound opposite the first side of the molding compound, the first conductive layer being electrically connected to the contact pads;   forming a first insulating layer over the first conductive layer and molding compound;   removing a portion of the first insulating layer to expose the first conductive layer;   forming a second conductive layer over the first conductive layer and first insulating layer;   forming a second insulating layer over the first insulating layer and second conductive layer;   removing a portion of the second insulating layer to expose the second conductive layer; depositing solder material in electrical contact with the second conductive layer;   reflowing the solder material to form a solder bump;   removing the second sacrificial carrier;   forming vias through the first side of the molding compound to the contact pads, the vias having a reduced depth due to the conductive pillars;   forming a third conductive layer over the molding compound and sidewalls of the vias to electrically connect to the contact pads;   forming a third insulating layer over the molding compound and third conductive layer, the third insulating layer extending into the vias to cover the third conductive layer; and   removing a portion of the third insulating layer to expose the third conductive layer.   
   
   
       2 . The method of  claim 1 , further including forming a wire bond electrically connected to one of the plurality of contact pads. 
   
   
       3 . The method of  claim 1 , wherein the first semiconductor die electrically connects to the contact pads with solder bumps or wire bonds. 
   
   
       4 - 5 . (canceled) 
   
   
       6 . The method of  claim 1 , further including:
 mounting a second semiconductor die to the solder bump; and   encapsulating the second semiconductor die with molding compound.   
   
   
       7 . (canceled) 
   
   
       8 . A method of making a semiconductor device, comprising:
 providing a sacrificial metal carrier;   forming a photoresist layer over the sacrificial metal carrier;   forming openings in the photoresist layer extending to the sacrificial metal carrier;   forming a plurality of contact pads on the sacrificial carrier, the contact pads being selectively electroplated through the openings in the photoresist layer onto the sacrificial metal carrier to provide precise alignment of the contact pads for electrical interconnect, the sacrificial metal carrier providing a plating current path for electroplating the contact pads;   removing the photoresist layer;   mounting a first semiconductor die to electrically connect to the contact pads;   encapsulating the first semiconductor die with molding compound;   removing the sacrificial metal carrier;   mounting a second sacrificial carrier over a first side of the molding compound opposite the contact pads;   forming a first conductive layer over a second side of the molding compound opposite the first side of the molding compound, the first conductive layer being electrically connected to the contact pads;   forming a first insulating layer over the first conductive layer;   removing the second sacrificial carrier;   forming vias through the first side of the molding compound to the contact pads;   forming a second conductive layer over the molding compound and into the vias to electrically connect to the contact pads; and   forming a second insulating layer over the molding compound and second conductive layer   
   
   
       9 . The method of  claim 8 , further including:
 depositing solder material on the first conductive layer; and   reflowing the solder material to form a solder bump.   
   
   
       10 . The method of  claim 9 , further including:
 mounting a second semiconductor die to the solder bump; and   encapsulating the second semiconductor die with molding compound.   
   
   
       11 . (canceled) 
   
   
       12 . The method of  claim 8 , wherein the first semiconductor die electrically connects to the contact pads with solder bumps or wire bonds. 
   
   
       13 - 15 . (canceled) 
   
   
       16 . A method of making a semiconductor package, comprising:
 providing a sacrificial metal carrier;   forming a photoresist layer over the sacrificial metal carrier;   forming openings in the photoresist layer extending to the sacrificial metal carrier;   forming a plurality of contact pads on the sacrificial carrier, the contact pads being selectively electroplated through the openings in the photoresist layer onto the sacrificial metal carrier to provide precise alignment of the contact pads for electrical interconnect, the sacrificial metal carrier providing a plating current path for electroplating the contact pads;   mounting a first semiconductor die to electrically connect to the contact pads;   encapsulating the first semiconductor die with molding compound; and   forming an interconnect structure over the molding compound and electrically connected to the contact pads.   
   
   
       17 . The method of  claim 16 , wherein forming the interconnect structure includes:
 forming a first conductive layer over the molding compound and electrically connected to the contact pads;   forming a first insulating layer over the first conductive layer; and   removing a portion of the first insulating layer to expose the first conductive layer.   
   
   
       18 . The method of  claim 17 , further including:
 forming a second conductive layer over the first insulating layer and electrically connected to the first conductive layer;   forming a second insulating layer over the second conductive layer; and   removing a portion of the second insulating layer to expose the second conductive layer.   
   
   
       19 . The method of  claim 18 , further including mounting a front-side process carrier to the second insulating layer with an adhesive layer. 
   
   
       20 . The method of  claim 19 , further including:
 forming vias through the molding compound to the contact pads;   forming a second conductive layer in the vias to electrically connect to the contact pads;   forming a second insulating layer over the second conductive layer; and   removing a portion of the second insulating layer to expose the second conductive layer.   
   
   
       21 . The method of  claim 17 , further including:
 depositing solder material on the first conductive layer; and   reflowing the solder material to form a solder bump.   
   
   
       22 . The method of  claim 16 , further including removing the sacrificial carrier. 
   
   
       23 . The method of  claim 16 , wherein the first semiconductor die electrically connects to the contact pads with solder bumps or wire bonds. 
   
   
       24 . The method of  claim 16 , further including forming a pillar under each of the plurality of contact pads.