US2009166884A1PendingUtilityA1
Semiconductor device and method for manufacturing the same
Est. expiryDec 26, 2025(expired)· nominal 20-yr term from priority
Inventors:In-Cheol Baek
H10P 50/73H10W 20/425H10W 20/42H10W 20/082H10D 64/011
51
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, the interlayer dielectric layer having a hole with a taper angled at the hole's upper portion; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the diffusion barrier layer.
Claims
exact text as granted — not AI-modified1 . A semiconductor device comprising:
a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, wherein the interlayer dielectric layer has a hole above the conductive layer, wherein an upper portion of the hole has a tapered angle; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the di fusion barrier layer.
2 . The semiconductor device of claim 1 , wherein a lower portion of the hole has a width identical to a width of a middle portion of the hole, and a width of the upper portion of the hole is wider than the width of the lower portion of the hole.
3 . The semiconductor device of claim 1 , wherein the diffusion barrier layer comprises a single TaN layer.
4 . The semiconductor device of claim 1 , wherein the diffusion barrier layer comprises a single Ta layer.
5 . The semiconductor device of claim , wherein the diffusion barrier layer comprises a dual TaN/Ta layer.
6 . The semiconductor device of claim 1 , wherein the upper portion of the hole is sunk at a predetermined angle.
7 . The semiconductor device of claim 1 , wherein the upper portion of the hole has a width wider than the width of the lower portion of the hole.
8 . The semiconductor device of claim 1 , wherein the lower portion of the hole has a width identical to a width of a middle portion of the hole.Join the waitlist — get patent alerts
Track US2009166884A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.