Power semiconductor module

Abstract

A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.

1 . A power semiconductor module, comprising:
 a metal base comprising a heat sink;   a semiconductor chip;   a ceramic substrate;   a circuit assembly body comprising the ceramic substrate, wherein the semiconductor chip is placed on the ceramic substrate which is then placed on the metal base; and   an outer case having terminals formed integrally therein,   wherein the ceramic substrate is integrally formed on the metal base by successively spray-forming a ceramic layer of the ceramic substrate, and a copper layer of the upper circuit plate, on the surface of the metal base.   
     
     
         2 . The power semiconductor module according to  claim 1 , wherein the ceramic layer is any one of alumina, aluminum nitride, and silicon nitride. 
     
     
         3 . The power semiconductor module according to  claim 1 , wherein aluminum is spray-formed on the surface of the copper layer to form an upper circuit plate bonding pad. 
     
     
         4 . The power semiconductor module according to  claim 1 , wherein the power semiconductor module comprises placing at least one ceramic substrate on the metal base.