Method for forming a plurality of metal lines in a semiconductor device using dual insulating layer

Abstract

A method for forming a plurality of metal lines in a semiconductor device including forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other; depositing a metal layer on and between the first insulating layer patterns; planarizing the metal layer; patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; and forming a second insulating layer on and between the metal lines.

1 - 7 . (canceled) 
   
   
       8 . An apparatus for forming a plurality of metal lines in a semiconductor device, comprising:
 means for forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other;   means for depositing a metal layer on and between the first insulating layer patterns;   
     means for planarizing the metal layer;
 means for patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; 
 means for forming a second insulating layer on and between the metal lines. 
 
   
   
       9 . The apparatus of  claim 8 , wherein the means for forming first insulating layer patterns includes means for forming first insulating layer patterns lower than the metal lines. 
   
   
       10 . The apparatus of  claim 9 , wherein the means for forming first insulating layer patterns includes means for forming first insulating layer patterns with a height of ⅓ to ⅔ of that of the metal lines. 
   
   
       11 . The apparatus of  claim 9 , further comprising means for planarizing the second insulating layer. 
   
   
       12 . The apparatus of  claim 9 , wherein means for depositing a metal layer includes means for depositing a metal layer comprising aluminum. 
   
   
       13 . The apparatus of  claim 9 , wherein means for depositing a metal layer includes a sputtering apparatus. 
   
   
       14 . The apparatus of  claim 9 , wherein means for forming a second insulating layer includes a high-density plasma CVD apparatus.