Semiconductor device and manufacturing method for the same

Abstract

A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.

1 . A semiconductor device, comprising:
 a semiconductor substrate;   a gate insulating film provided on the semiconductor substrate;   a gate electrode provided on the gate insulating film;   a sidewall spacer provided on side walls of the gate insulating film and the gate electrode;   an extension region including germanium atoms and first impurity atoms, provided on a surface layer of the semiconductor substrate on both sides of the gate insulating film, the first impurity atoms are coexisting with the germanium atoms in the entire first diffusion region, the first impurity atoms contributing to electric conductivity; and   a diffusion region including second impurity atoms, provided on an upper side of the extension region at a depth more shallow than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.