Semiconductor light emitting element and method for fabricating the same

Abstract

The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

1 . A semiconductor light emitting element, comprising:
 a semiconductor substrate of a hexagonal crystalline system, including a principal plane which has a plane direction tilted with respect to a (0001) plane direction; and   an active layer of Al x Ga y In z N (0≦x≦1, 0≦y≦1, 0≦z≦1) arranged on the principal plane of the semiconductor substrate and composed of wurtzite-type crystal.   
     
     
         2 . A semiconductor light emitting element according to  claim 1 , wherein the active layer has a stress in an in-plane direction of the principal plane of the semiconductor substrate. 
     
     
         3 . A semiconductor light emitting element according to  claim 1 , wherein the principal plane of the semiconductor substrate is a (1100) plane, a (1120) plane or an R plane. 
     
     
         4 . A semiconductor light emitting element according to  claim 1 , wherein the active layer includes a well layer and a barrier layer.