Semiconductor device and method for manufacturing the same, and electric device

Abstract

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

1 . An active matrix display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising an inorganic material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       2 . The active matrix display device according to  claim 1 , wherein the insulating film comprises silicon nitride or silicon nitride oxide. 
   
   
       3 . An active matrix liquid crystal display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising an inorganic material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       4 . The active matrix liquid crystal display device according to  claim 3 , wherein the insulating film comprises silicon nitride or silicon nitride oxide. 
   
   
       5 . An active matrix EL display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising an inorganic material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       6 . The active matrix EL display device according to  claim 5 , wherein the insulating film comprises silicon nitride or silicon nitride oxide. 
   
   
       7 . An active matrix display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a resin material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       8 . The active matrix display device according to  claim 7 , wherein the insulating film comprises a material selected from the group consisting of epoxy resin, acrylic resin, phenol resin, novolac resin, melamine resin, and urethane resin. 
   
   
       9 . An active matrix liquid crystal display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a resin material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       10 . The active matrix liquid crystal display device according to  claim 9 , wherein the insulating film comprises a material selected from the group consisting of epoxy resin, acrylic resin, phenol resin, novolac resin, melamine resin, and urethane resin. 
   
   
       11 . An active matrix EL display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a resin material formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       12 . The active matrix EL display device according to  claim 11 , wherein the insulating film comprises a material selected from the group consisting of epoxy resin, acrylic resin, phenol resin, novolac resin, melamine resin, and urethane resin. 
   
   
       13 . An active matrix display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       14 . An active matrix liquid crystal display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       15 . An active matrix EL display device comprising:
 a thin film transistor formed over a substrate, the thin film transistor comprising:
 a gate electrode; 
 a gate insulating film formed over the gate electrode; and 
 a semiconductor film comprising a metal oxide wherein the metal includes In; 
   an insulating film comprising a siloxane-based polymer formed on the semiconductor film; and   a pixel electrode formed on the insulating film and electrically connected to the thin film transistor.   
   
   
       16 . The active matrix display device according to any one of  claims 1 ,  7  or  13  wherein the metal oxide includes zinc, gallium, and indium. 
   
   
       17 . The active matrix liquid crystal display device according to any one of  claims 3 ,  9  or  14  wherein the metal oxide includes zinc, gallium, and indium. 
   
   
       18 . The active matrix EL display device according to any one of  claims 5 ,  11  or  15  wherein the metal oxide includes zinc, gallium, and indium. 
   
   
       19 . The active matrix display device according to any one of  claims 1 ,  7  or  13  wherein the substrate is a plastic substrate. 
   
   
       20 . The active matrix liquid crystal display device according to any one of  claims 3 ,  9  or  14  wherein the substrate is a plastic substrate. 
   
   
       21 . The active matrix EL display device according to any one of  claims 5 ,  11  or  15  wherein the substrate is a plastic substrate. 
   
   
       22 . The active matrix display device according to any one of  claims 1 ,  7  or  13  wherein the substrate is a glass substrate. 
   
   
       23 . The active matrix liquid crystal display device according to any one of  claims 3 ,  9  or  14  wherein the substrate is a glass substrate. 
   
   
       24 . The active matrix EL display device according to any one of  claims 5 ,  11  or  15  wherein the substrate is a glass substrate. 
   
   
       25 . The active matrix display device according to any one of  claims 1 ,  7  or  13  wherein the insulating film directly contacts an upper surface of the semiconductor film. 
   
   
       26 . The active matrix liquid crystal display device according to any one of  claims 3 ,  9  or  14  wherein the insulating film directly contacts an upper surface of the semiconductor film. 
   
   
       27 . The active matrix EL display device according to any one of  claims 5 ,  11  or  15  wherein the insulating film directly contacts an upper surface of the semiconductor film.