US2009152540A1PendingUtilityA1
Semiconductor device and process for producing same
Est. expiryJul 28, 2025(expired)· nominal 20-yr term from priority
Inventors:Kazumasa Nomoto
G03F 7/0002B82Y 40/00B82Y 10/00H10K 71/13H05K 3/1258H05K 2203/013H10K 10/466H10K 10/464H10K 71/611H10K 71/135H10K 71/821
56
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Claims
Abstract
A semiconductor device and process for producing same are provided. The process for producing a semiconductor device includes a first embossing step of pressing a stamp having a relief pattern onto a surface of a substrate to form a depression pattern on the surface of the substrate; a second step of feeding an application material composed of a semiconductor material or a conductive material into the depression pattern by printing; and a third step of curing the application material fed by printing.
Claims
exact text as granted — not AI-modified1 . A semiconductor device comprising: a substrate; a semiconductor material layer or a conductive material layer produced by solidifying an application material; and a depression pattern disposed at a surface of the substrate, wherein the depression pattern is selectively filled with the semiconductor material layer or the conductive material layer.
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