Method for manufacturing semiconductor device and substrate processing apparatus

Abstract

The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature.

1 . A method for manufacturing a semiconductor device comprising the steps of:
 loading a substrate into a processing chamber;   performing a processing of forming a thin film on the substrate by supplying a processing gas to an inside of the processing chamber heated to a processing temperature;   unloading the processed substrate out of the processing chamber; and   cleaning the inside of the processing chamber by supplying a cleaning gas to the inside of the processing chamber, in a state where the substrate is not present in the processing chamber,   wherein   the step of cleaning the inside of the processing chamber comprises the steps of:
 removing the thin film deposited on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and 
 removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature. 
   
   
   
       2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the first temperature is set to not less than 350° C. and not more than 450° C., and the second temperature is set to not less than 400° C. and not more than 500° C. 
   
   
       3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein both the first and second temperatures are set to not less than 400° C. and not more than 450° C. 
   
   
       4 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the second temperature is set to equal to or higher than the first temperature. 
   
   
       5 . The method for manufacturing a semiconductor device according to  claim 2 , wherein a pressure in the processing chamber is set to not less than 6650 Pa and not more than 26600 Pa in the step of cleaning the inside of the processing chamber. 
   
   
       6 . The method for manufacturing a semiconductor device according to  claim 1 , further comprising the step of:
 in the state where the substrate is not present in the processing chamber, purging the inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing a temperature in the processing chamber to a temperature lower than the processing temperature, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material adhered on the inside of the processing chamber with a weak adhesive force.   
   
   
       7 . A method for manufacturing a semiconductor device comprising the steps of:
 loading a substrate into a processing chamber composed of a member including a quartz member and a metal member;   performing a processing of forming a silicon nitride film on the substrate by supplying a processing gas to an inside of the processing chamber;   unloading the processed substrate out of the processing chamber; and   cleaning the inside of the processing chamber by supplying a cleaning gas to the inside of the processing chamber, in a state where the substrate is not present in the processing chamber,   wherein   the step of cleaning the inside of the processing chamber comprises the steps of:
 removing the silicon nitride film deposited on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber in which a temperature is set to not less than 350° C. and not more than 450° C. and a pressure is set to not less than 6650 Pa and not more than 26600 Pa; and 
 removing an adhered material including a quarts powder remaining on the inside of the processing chamber after removing the silicon nitride film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber in which a temperature is set to not less than 400° C. and not more than 500° C. and a pressure is set to not less than 6650 Pa and not more than 26600 Pa. 
   
   
   
       8 . A substrate processing apparatus comprising:
 a processing chamber for performing a processing of forming a thin film on a substrate;   a processing gas supply system for supplying a processing gas to an inside of the processing chamber;   a cleaning gas supply system for supplying a cleaning gas to the inside of the processing chamber;   a heater for heating the inside of the processing chamber; and   a controller for controlling the heater, the processing gas supply system, and the cleaning gas supply system, so as to, when performing the processing on the substrate in the processing chamber, perform the processing of forming a thin film on the substrate by supplying a processing gas to the inside of the processing chamber while heating the inside of the processing chamber to a processing temperature; and so as to, when cleaning the inside of the processing chamber, in a state where the substrate is not present in the processing chamber, remove the thin film deposited on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber while heating the inside of the processing chamber to a first temperature, and subsequently remove an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber while heating the inside of the processing chamber to a second temperature.