US2009148624A1PendingUtilityA1

Plasma cvd apparatus and method

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Assignee: ISHIKAWAJIMA HARIMA HEAVY INDPriority: May 17, 2000Filed: Feb 10, 2009Published: Jun 11, 2009
Est. expiryMay 17, 2020(expired)· nominal 20-yr term from priority
Inventors:Tomoko TakagiMasashi Ueda
H01J 37/321H01J 37/32541H01J 37/32137H01J 37/32165C23C 16/509H01J 37/32155H01J 37/3211H01J 37/32119H01J 37/32559H01J 37/32128H01J 37/32183H01J 37/32174H01J 37/32146
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Claims

Abstract

A plasma CVD apparatus includes a an electrode array in a reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, each of the electrodes having at least a portion with a diameter of 10 mm or less, and a phase controlled power supply for feeding high frequency power to the feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between a feeding portion and a folded back portion and between a grounded portion and the folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.

Claims

exact text as granted — not AI-modified
1 . A plasma CVD apparatus comprising:
 a reaction chamber,   an electrode array in the reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions and having a feeding portion at a first end and a grounded portion at a second end,   the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane,   each of said electrodes having at least a portion with a diameter of 10mm or less, and   a phase controlled power supply for feeding high frequency power to said feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between said feeding portion and said folded back portion and between said grounded portion and said folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.   
   
   
       2 . The plasma CVD apparatus according to  claim 1 , wherein said phase difference is 180 degrees. 
   
   
       3 . The plasma CVD apparatus according to  claim 1 , comprising a plurality of said electrode arrays, and substrates are arranged on both sides of each array. 
   
   
       4 . The plasma CVD apparatus according to  claim 1 , wherein said phase controlled power supply includes a phase shifter. 
   
   
       5 . The plasma CVD apparatus according to  claim 1 , wherein the distance between the feeding portion and the folded back portion of every other electrode is elongated by the half wavelength outside said reaction chamber. 
   
   
       6 . A plasma CVD apparatus comprising:
 a reaction chamber,   an electrode array in the reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions and having a feeding portion at a first end and a grounded portion at a second end,   the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane,   at least a portion of each of said electrodes being covered with a dielectric, and   a phase controlled power supply for feeding high frequency power to said feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between said feeding portion and said folded back portion and between said grounded portion and said folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.   
   
   
       7 . The plasma CVD apparatus according to  claim 6 , wherein said phase difference is 180 degrees. 
   
   
       8 . The plasma CVD apparatus according to  claim 6 , comprising a plurality of said electrode arrays, and substrates are arranged on both sides of each array. 
   
   
       9 . The plasma CVD apparatus according to  claim 6 , wherein each of said electrodes has at least a portion with a diameter of 10 mm or less. 
   
   
       10 . The plasma CVD apparatus according to  claim 9 , comprising a plurality of said electrode arrays, and substrates are arranged on both sides of each array. 
   
   
       11 . The plasma CVD apparatus according to  claim 6 , wherein the thickness of said dielectric is varied in the longitudinal direction of each of the electrodes. 
   
   
       12 . The plasma CVD apparatus according to  claim 11 , comprising a plurality of said electrode arrays, and substrates are arranged on both sides of each array. 
   
   
       13 . The plasma CVD apparatus according to  claim 6 , wherein said phase controlled power supply includes a phase shifter. 
   
   
       14 . The plasma CVD apparatus according to  claim 6 , wherein the distance between the feeding portion and the folded back portion of every other electrode is elongated by the half wavelength outside said reaction chamber. 
   
   
       15 . A plasma CVD method comprising:
 arranging, in a reaction chamber, an electrode array, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions and having a feeding portion at a first end and a grounded portion at a second end, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, wherein each of said electrodes having at least a portion with a diameter of 10 mm or less;   feeding high frequency power so as to establish a standing wave of a half wavelength or a natural number multiple of a half wavelength between said feeding portions and said folded back portions and between said grounded portions and said folded back portions to generate a plasma of reactive gas introduced in said reaction chamber to form a thin film including at least one element constituting the reactive gas; and   setting a phase difference between adjacent two feeding portions of said electrodes to a prescribed value.   
   
   
       16 . The plasma CVD method according to  claim 15 , wherein the phase difference between adjacent two feeding portions is set to 180 degrees. 
   
   
       17 . The plasma CVD method according to  claim 15 , wherein a plurality of said electrode arrays are arranged, and substrates are arranged on both sides of each array. 
   
   
       18 . A plasma CVD method comprising:
 arranging, in a reaction chamber, an electrode array, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions and having a feeding portion at a first end and a grounded portion at a second end, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, wherein at least a portion of each of said electrodes is covered with a dielectric;   feeding high frequency power so as to establish a standing wave of a half wavelength or a natural number multiple of a half wavelength between said feeding portions and said folded back portions and between said grounded portions and said folded back portions to generate a plasma of reactive gas introduced in said reaction chamber to form a thin film including at least one element constituting the reactive gas; and   setting the phase difference between adjacent two feeding portions of said electrodes.   
   
   
       19 . The plasma CVD method according to  claim 18 , wherein the phase difference between the adjacent two feeding portions is 180 degrees. 
   
   
       20 . The plasma CVD method according to  claim 18 , wherein a plurality of said electrode arrays are arranged, and substrates are arranged on both sides of each array. 
   
   
       21 . The plasma CVD method according to  claim 18 , wherein said electrode has at least a portion with a diameter of 10 mm or less. 
   
   
       22 . The plasma CVD method according to  claim 18 , wherein a plurality of said electrode arrays are arranged in a plurality of layers, and substrates are arranged on both sides of each array. 
   
   
       23 . The plasma CVD method according to  claim 18 , wherein the frequency of said high frequency power is 60 MHz or higher.

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