Interconnect structure

Abstract

An interconnect structure is disposed on a substrate with a conductive part thereon and includes a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a first UV cutting layer at least between the first porous low-k layer and the second porous low-k layer. The damascene structure is electrically connected with the conductive part. The UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

1 . An interconnect structure, disposed on a substrate with a conductive part thereon and comprising:
 a first porous low-k layer on the substrate;   a damascene structure in the first porous low-k layer, electrically connected with the conductive part;   a second porous low-k layer over the first porous low-k layer and the damascene structure; and   a first UV cutting layer at least between the first porous low-k layer and the second porous low-k layer, wherein the UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.   
   
   
       2 . The interconnect structure of  claim 1 , wherein the first UV cutting layer is further disposed between the damascene structure and the second porous low-k layer. 
   
   
       3 . The interconnect structure of  claim 2 , further comprising an etching stop layer between the first UV cutting layer and the second porous low-k layer. 
   
   
       4 . The interconnect structure of  claim 3 , wherein the etching stop layer also serves as a UV reflection layer, a UV absorption layer or a UV reflection-absorption layer. 
   
   
       5 . The interconnect structure of  claim 2 , further comprising an etching stop layer disposed on the first porous low-k layer and the damascene structure and under the first UV cutting layer. 
   
   
       6 . The interconnect structure of  claim 5 , wherein the etching stop layer also serves as a UV reflection layer, a UV absorption layer or a UV reflection-absorption layer. 
   
   
       7 . The interconnect structure of  claim 1 , wherein the damascene structure is disposed in the first UV cutting layer and the first porous low-k layer. 
   
   
       8 . The interconnect structure of  claim 7 , further comprising an etching stop layer disposed on the first UV cutting layer and the damascene structure and under the second porous low-k layer. 
   
   
       9 . The interconnect structure of  claim 8 , wherein the etching stop layer also serves as a UV reflection layer, a UV absorption layer or a UV reflection-absorption layer. 
   
   
       10 . The interconnect structure of  claim 1 , wherein the first UV cutting layer comprises a material selected from nitrogen-containing compounds, carbon-containing compounds and oxygen-containing compounds. 
   
   
       11 . The interconnect structure of  claim 10 , wherein the first UV cutting layer as a UV reflection layer comprises UV-SiN. 
   
   
       12 . The interconnect structure of  claim 1 , wherein the first UV cutting layer as a UV reflection-absorption layer comprises a composite layer that comprises a UV reflection film and a UV absorption film thereon. 
   
   
       13 . The interconnect structure of  claim 1 , wherein the first UV cutting layer as a UV reflection-absorption layer comprises a composite layer that comprises a UV absorption film and a UV reflection film thereon. 
   
   
       14 . The interconnect structure of  claim 1 , wherein the first UV cutting layer has a thickness of about 100 Å to about 1000 Å. 
   
   
       15 . The interconnect structure of  claim 1 , wherein the substrate excluding the conductive part comprises a porous low-k material, further comprising a second UV cutting layer at least between the porous low-k material and the first porous low-k layer.