Apparatus and method for depositing film, and method of manufacturing luminescent device

Abstract

A film depositing apparatus includes: a chamber in which a substrate is disposed; a gas introducing portion for introducing a reactive gas into the chamber; a gas exhausting portion for exhausting the reactive gas from the chamber; and a control portion for controlling particle exhausting processing for exhausting particles within the chamber from the gas exhausting portion either in a middle of depositing a film on the substrate disposed within the chamber in accordance with a reaction based on the reactive gas, or in a stage of completion of the film deposition. The control portion carries out the control in a way that as the particle exhausting processing performed in a phase of film deposition, the reactive gas is introduced into the chamber at a flow rate more than that in the phase of the film deposition, and is exhausted from the gas exhausting portion.

1 . A film depositing apparatus, comprising:
 a chamber in which a substrate is disposed;   a gas introducing portion for introducing a reactive gas into the chamber;   a gas exhausting portion for exhausting the reactive gas from said chamber; and   a control portion for controlling particle exhausting processing for exhausting particles within said chamber from said gas exhausting portion either in a middle of depositing a film on said substrate disposed within said chamber in accordance with a reaction based on the reactive gas, or in a stage of completion of the film deposition.   
   
   
       2 . The film depositing apparatus according to  claim 1 ,
 wherein said control portion carries out the control in a way that as the particle exhausting processing performed in a phase of film deposition, the reactive gas is introduced into said chamber at a flow rate more than that in the phase of the film deposition, and is exhausted from said gas exhausting portion.   
   
   
       3 . The film depositing apparatus according to  claim 1 ,
 wherein said control portion carries out the control in a way that as the particle exhausting processing performed in a phase of film deposition, a pressure at which the reactive gas is introduced into said chamber is made higher than that in a phase of film deposition.   
   
   
       4 . The film depositing apparatus according to  claim 1 ,
 wherein said control portion carries out the control in a way that as the particle exhausting processing performed in a phase of film deposition, air is introduced into said chamber and is exhausted from said gas exhausting portion.   
   
   
       5 . The film depositing apparatus according to  claim 1 ,
 wherein said control portion carries out the particle exhausting processing in a phase of film deposition plural times.   
   
   
       6 . A film depositing method, comprising the steps of:
 introducing a gas into a chamber having a substrate disposed therein;   forming a film on said substrate in accordance with a reaction based on the reactive gas; and   performing particle exhausting processing for exhausting particles within said chamber either in a middle of depositing said film on said substrate or in a stage of completion of said film deposition.   
   
   
       7 . The film depositing method according to  claim 6 ,
 wherein as the particle exhausting processing performed in a phase of film deposition, the reactive gas is introduced into said chamber at a flow rate more than that in the phase of the film deposition, and is exhausted from said gas exhausting portion.   
   
   
       8 . The film depositing method according to  claim 6 ,
 wherein as the particle exhausting processing performed in a phase of film deposition, a pressure at which the reactive gas is introduced into said chamber is made higher than that in a phase of film deposition.   
   
   
       9 . The film depositing method according to  claim 6 ,
 wherein as the particle exhausting processing performed in a stage of completion of the film deposition, air is introduced into said chamber and is exhausted from said gas exhausting portion.   
   
   
       10 . The film depositing method according to  claim 6 ,
 wherein the particle exhausting processing in a phase of film deposition is carried out plural times.   
   
   
       11 . A luminescent device manufacturing method of forming a protective film on a luminescent film formed on a substrate by utilizing a chemical vapor deposition method, said method comprising the steps of:
 performing particle exhausting processing for exhausting particles within said chamber either in a middle of forming said protective film by utilizing the chemical vapor deposition method or in a stage of completion of the formation of said protective film; and   taking out said substrate from the chamber.   
   
   
       12 . The luminescent device manufacturing method according to  claim 11 ,
 wherein as the particle exhausting processing performed in a middle of formation of said protective film, the reactive gas is introduced into said chamber at a flow rate more than that in a phase of formation of said protective film, and is exhausted from said gas exhausting portion.   
   
   
       13 . The luminescent device manufacturing method according to  claim 11 ,
 wherein as the particle exhausting processing performed in a middle of formation of said protective film, a pressure at which the reactive gas is introduced into said chamber is made higher than that in a phase of formation of said protective film.   
   
   
       14 . The luminescent device manufacturing method according to  claim 11 ,
 wherein as the particle exhausting processing performed in a stage of completion of the formation of said protective film, air is introduced into said chamber and is exhausted from said gas exhausting portion.   
   
   
       15 . The luminescent device manufacturing method according to  claim 11 ,
 wherein the particle exhausting processing performed in a middle of formation of said protective film is carried out plural times.