US2009140439A1PendingUtilityA1
Method of manufacturing a chip and a chip stack
Est. expirySep 27, 2025(expired)· nominal 20-yr term from priority
H10W 90/722H10W 90/297H10W 72/9415H10W 72/07251H10W 72/244H10W 72/90H10W 72/20H10W 90/00H10W 20/20H10W 20/0234H10W 20/0249H10W 20/0242H10W 72/942H10W 72/012H10W 72/221H10W 20/023
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Claims
Abstract
Provided are a chip, a chip stack, and a method of manufacturing the Same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.
Claims
exact text as granted — not AI-modified1 . A chip, comprising:
at least one pad formed on a wafer; and a metal layer formed to protrude up to a predetermined thickness from the bottom of the wafer in a via hole penetrating the wafer to expose the bottom of the pad.
2 . The chip of claim 1 , wherein the via hole has an aspect ratio of 1 to 3.
3 . The chip of claim 1 , wherein the metal layer includes a first metal layer formed to a predetermined thickness from the exposed bottom of the pad using a copper and a second metal layer formed on the first metal layer to protrude up to a predetermined thickness from the bottom of the wafer using one of stannum/copper (Sn/Cu), stannum (Sn) and stannum/bismuth (Sn/Bi).
4 . A chip stack, comprising:
a plurality of chips which include at least one pad formed on a wafer and a metal layer formed to protrude Up to a predetermined thickness from the bottom of the wafer in a via hole penetrating the wafer to expose the bottom of the pad, wherein the pad and the metal layer of adjacent chips are bonded to each other.Join the waitlist — get patent alerts
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