Impurity Introducing Apparatus and Impurity Introducing Method
Abstract
It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
Claims
exact text as granted — not AI-modified1 - 8 . (canceled)
9 . A plasma doping apparatus for introducing an impurity material by using a plasma for a sample, comprising
a first chamber group disposed every desirable impurity material; and a delivering mechanism provided every desirable impurity material and serving to deliver the sample.
10 . The plasma doping apparatus according to claim 9 , further comprising:
a second chamber group serving to carry out different treatments from all treatments of a plurality of chambers constituting the first chamber group and disposed every desirable impurity material.
11 . The plasma doping apparatus according to claim 10 , wherein the chambers constituting the second chamber group carry out a treatment for removing a resist layer formed on a sample.
12 . The plasma doping apparatus according to claim 9 , wherein the chambers of the first chamber group have at least one of P-type and N-type doping chambers.
13 . The plasma doping apparatus according to claim 9 , wherein the chambers of the first chamber group have at least one of P-type and N-type doping chambers, respectively.
14 . A plasma doping apparatus, comprising:
delivering mechanisms that are different from each other every doping chamber.
15 . A plasma doping apparatus, wherein the number of delivering mechanisms is equal to or greater than that of doping chambers.
16 . The plasma doping apparatus according to claim 9 , further comprising:
a transfer chamber having a partition wall for partitioning each of the chambers of the first chamber group therein.
17 . The plasma doping apparatus according to claim 16 , wherein the partition wall is provided with a sample holding mechanism.
18 . The plasma doping apparatus according to claim 9 , further comprising:
a HePA chamber for amorphizing a sample by a He plasma.
19 . The plasma doping apparatus according to claim 18 , wherein a chamber is disposed every impurity material on both sides of the HePA chamber.
20 . The plasma doping apparatus according to claim 9 , wherein each of the chambers of the first chamber group has a function of amorphizing a sample by a He plasma.
21 . The plasma doping apparatus according to claim 9 , further comprising:
a transfer chamber every chamber.
22 . A plasma doping method of delivering a sample between a first doping chamber and a first ashing chamber by a delivering mechanism provided every doping chamber.
23 . The plasma doping apparatus according to claim 14 , further comprising:
a HePA chamber for amorphizing a sample by a He plasma.
24 . The plasma doping apparatus according to claim 15 , further comprising:
a HePA chamber for amorphizing a sample by a He plasma.
25 . The plasma doping apparatus according to claim 15 , wherein each of the chambers of the first chamber group has a function of amorphizing a sample by a He plasma.
26 . The plasma doping apparatus according to claim 14 , further comprising:
a transfer chamber every chamber.
27 . The plasma doping apparatus according to claim 15 , further comprising:
a transfer chamber every chamber.Join the waitlist — get patent alerts
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