Method of making semiconductor device

Abstract

A semiconductor device is manufactured by a method including forming a first interlayer insulating film. A first etching stopper film is formed on the first interlayer insulating film. A conductive layer is formed on the first etching stopper film. A second etching stopper film is formed to cover the conductive layer, an upper surface of the conductive layer and both side surfaces of the conductive layer. A second interlayer insulating film is formed on the second etching stopper film. A hole is formed penetrating the second interlayer insulating film in a direction of thickness and reaching the conductive layer. An interconnect is formed in the hole. The step of forming a hole includes etching the second interlayer insulating film under a first etching condition, and etching the second etching stopper film under a second etching condition different from the first etching condition. The second etching condition includes using an etching gas containing C, F, and H.

1 - 2 . (canceled) 
   
   
       3 . A method of manufacturing a semiconductor device, comprising the steps of:
 forming a first interlayer insulating film;   forming a first etching stopper film on said first interlayer insulating film;   forming a conductive layer on said first etching stopper film;   forming a second etching stopper film to cover said first etching stopper film, an upper surface of said conductive layer and both side surfaces of said conductive layer conductive layer,   forming a second interlayer insulating film on said second etching stopper film;   forming a hole penetrating said second interlayer insulating film in a direction of thickness and reaching said conductive layer; and   forming an interconnection in said hole; wherein   said step of forming a hole includes the steps of   etching said second interlayer insulating film under a first etching condition, and   etching said second etching stopper film under a second etching condition different from said first etching condition, wherein said second etching condition comprises using an etching gas containing C, F, and H.   
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 3 , wherein
 each of said first etching stopper film and said second etching stopper film includes any one of a silicon nitride film and a silicon rich oxide (SRO) film.   
   
   
       5 . The method of manufacturing a semiconductor device according to  claim 3 , wherein said second etching condition comprises using an etching gas obtained by adding at least any of O 2  and CO or Ar to CHF 3  or CH 2 F 2 . 
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 3 , wherein said first etching condition comprises using an etching gas obtained by adding at least any of O 2  and CO or Ar to C 4 F 8 , C 5 F 8 , C 4 F 6 , C 2 F 4 , or C 3 F 6 . 
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 3 , wherein said conductive layer comprises aluminum or tungsten.