Carbon nanotube, method for positioning the same, field-effect transistor made using the carbon nanotube, method for making the field-effect transistor, and semiconductor device

Abstract

Carbon nanotube, method for positioning the same, field effect transistor made using the carbon nanotube, method for making the field-effect transistor, and a semiconductor device are provided. The carbon nanotube includes a bare carbon nanotube and a functional group introduced to at least one end of the bare carbon nanotube.

1 . A carbon nanotube comprising:
 a bare carbon nanotube; and   a functional group introduced to at least one end of the bare carbon nanotube.   
     
     
         2 . The carbon nanotube according to  claim 1 , wherein the functional group is introduced to both ends of the bare carbon nanotube. 
     
     
         3 . The carbon nanotube according to  claim 2 , wherein the functional group introduced to one end is different from another functional group introduced to the other end. 
     
     
         4 . The carbon nanotube according to  claim 1 , wherein the functional group selectively interacts with a predetermined conductive material. 
     
     
         5 . The carbon nanotube according to  claim 2 , wherein the functional groups selectively interact with predetermined conductive materials, respectively. 
     
     
         6 . The carbon nanotube according to  claim 3 , wherein the functional groups selectively interact with predetermined conductive materials, respectively. 
     
     
         7 . A method for positioning a carbon nanotube, the method comprising:
 forming a carbon nanotube thin film including semiconducting bare carbon nanotubes densely aligned on a first substrate in a direction intersecting a longitudinal direction of the carbon nanotubes;   introducing a first functional group to a first end of each of the bare carbon nanotubes constituting the carbon nanotube thin film;   attaching a second substrate onto a side of the carbon nanotube thin film opposite to the first substrate;   removing the first substrate and introducing a second functional group to a second end of each of the bare carbon nanotubes;   separating the carbon nanotube thin film from the second substrate and placing the carbon nanotube thin film in a solvent to disperse the carbon nanotubes having the first and second functional groups so as to prepare a dispersion; and   applying the dispersion onto electrodes composed of conductive materials that selectively interact with the first and second functional groups, the electrodes being formed in advance by patterning, so as to position the respective carbon nanotubes across the electrodes.   
     
     
         8 . A semiconductor device comprising:
 a semiconducting carbon nanotube;   a first region to which one end of the carbon nanotube is fixed; and   a second region to which the other end of the carbon nanotube is fixed,   wherein the material of the first region is different from another material of the second region.