Method of manufacturing semiconductor device and semiconductor device

Abstract

According to an embodiment of the present invention, a method of manufacturing a semiconductor device, comprising forming a conducting layer on a substrate; forming a resist mask having an opening in a prescribed position on the conducting layer; forming a first plated film in the opening by supplying an electric current to the conducting layer; increasing the interval between an inner side surface of the resist mask forming the opening and the first plated film by setting back the inner side surface; and forming a second plated film in the opening resulting from the setback of the inner side surface to cover the first plated film by supplying an electric current to the conducting layer.

1 .- 12 . (canceled) 
   
   
       13 . A semiconductor device, comprising:
 a substrate;   a conducting layer which is formed on the substrate;   a first plated film which is formed on the conducting layer; and   a second plated film which is formed on the conducting layer to cover the top and side surfaces of the first plated film.   
   
   
       14 . The semiconductor device according to  claim 13 , wherein the substrate comprises an electrode pad, and the conducting layer is in contact with the electrode pad. 
   
   
       15 . The semiconductor device according to  claim 13 , wherein the first plated film serves as relocation wiring. 
   
   
       16 . The semiconductor device according to  claim 15 , wherein the second plated film has an opening and further comprising a solder bump which is electrically connected to the first plated film via the opening. 
   
   
       17 . The semiconductor device according to  claim 13 , wherein the first plated film is formed of any of Cu, Ag and Au. 
   
   
       18 . The semiconductor device according to  claim 13 , wherein the second plated film is formed of either Sn or polyimide. 
   
   
       19 . The semiconductor device according to  claim 13 , wherein the first plated film is formed of Ag, and second plated film is formed of Sn. 
   
   
       20 . The semiconductor device according to  claim 13 , wherein the conducting layer has a function to suppress a material forming the first plated film or the second plated film from diffusing.