US2009129424A1PendingUtilityA1
Dendrimer Laser
Est. expiryJun 3, 2025(expired)· nominal 20-yr term from priority
H01S 5/12H01S 5/36H01S 5/1231C08G 83/003B29C 59/005B29C 2059/023H01S 5/041
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Claims
Abstract
A distributed feedback laser having a conjugated dendrimer as the active lasing component, and a method for patterning conjugated dendrimers.
Claims
exact text as granted — not AI-modified1 . A solid state laser having an active lasing component that is a dendrimer with the formula: CORE-[DENDRON] n in which CORE represents an atom or group, n represents an integer of at least one, and DENDRON, which may be the same or different if n is greater than one, represents a dendritic molecular structure, CORE terminating in the single bond to the first branching atom or group with more than one dendritic chain attached, said atom or group forming part of said DENDRON, with at least one DENDRON at least inherently partially conjugated.
2 . A laser as claimed in claim 1 , wherein the laser is a distributed feedback laser.
3 . A laser as claimed in claim 1 wherein n is greater than one and at least two of the DENDRONs are at least inherently partially conjugated.
4 . A laser as claimed in claim 1 wherein n is greater than one and all of the dendrons are at least inherently partially conjugated.
5 . A laser as claimed in claim 1 wherein the dendrimer is a second or higher generation dendrimer.
6 . A laser as claimed in claim 1 , wherein the dendrimer includes a plurality of chromophores, and the chromophore(s) that at least in part comprise(s) the core has a lower HOMO-LUMO energy gap than the chromophore(s) in the DENDRON(S).
7 . A laser as claimed in claim 1 wherein the chromophore(s) is (are) present only in the DENDRON(s).
8 . A laser as claimed in claim 1 where the chromophores are fluorescent.
9 . A laser as claimed in claim 1 having more than one dendrimer as an active lasing component.
10 . A laser as claimed in claim 1 wherein the dendrimer contains a bisfluorene CORE.
11 . A device comprising the laser of claim 1 .
12 . A method for patterning a film containing a dendrimer involving applying a mould to the film thereby to imprint a pattern thereon.
13 . A method as claimed in claim 12 wherein the film consists only of a dendrimer.
14 . A method as claimed in claim 12 wherein the dendrimer has the formula:
CORE-[DENDRON] n in which the core represents an atom or group, n represents an integer of at least one, and DENDRON, which may be the same or different if n is greater than one, represents a dendritic molecular structure, CORE terminating in the single bond to the first branching atom or group with more than one dendritic chain attached, said atom or group forming part of said DENDRON, with at least one DENDRON at least inherently partially conjugated.
15 . A method as claimed in claim 12 involving applying a softening fluid to the mould prior to applying it to the dendrimer film.
16 . A laser or photovoltaic cell or field effect transistor or photodiode or light emitting diode that is the product of the method of claim 12 .
17 . A method for fabricating a distributed feedback dendrimer laser comprising applying a mould to a film containing a dendrimer thereby to form a corrugated, distributed feedback surface.
18 . A method for fabricating a light emitting diode comprising applying a mould to a film containing a dendrimer thereby to form a corrugated surface.
19 . A method as claimed in claim 17 wherein the film consists solely of a dendrimer.
20 . A method as claimed in claim 17 wherein the dendrimer has the formula:
CORE-[DENDRON] n in which the core represents an atom or group, n represents an integer of at least one, and DENDRON, which may be the same or different if n is greater than one, represents a dendritic molecular structure, CORE terminating in the single bond to the first branching atom or group with more than one dendritic chain attached, said atom or group forming part of said DENDRON, with at least one DENDRON at least inherently partially conjugated.
21 . A method as claimed in claim 17 involving applying a softening fluid to the mould prior to applying the mould to the film.
22 . A method as claimed in claim 17 wherein the dendrimer is a second or higher generation dendrimer.
23 . A method as claimed in claim 17 wherein the dendrimer contains a bisfluorene CORE.
24 . A method as claimed in claim 17 the layer of dendrimer has more than one dendrimer as active lasing components.
25 . A method as claimed in claim 17 wherein the dendrimer is processed from solution to form the film ready for patterning.
26 . A method as claimed in claim 12 wherein the dendrimer is processed from solution to form the film ready for patterning.
27 . A method as claimed in claim 18 wherein the film consists solely of a dendrimer.
28 . A method as claimed in claim 18 wherein the dendrimer has the formula: CORE-[DENDRON] n in which the core represents an atom or group, n represents an integer of at least one, and DENDRON, which may be the same or different if n is greater than one, represents a dendritic molecular structure, CORE terminating in the single bond to the first branching atom or group with more than one dendritic chain attached, said atom or group forming part of said DENDRON, with at least one DENDRON at least inherently partially conjugated.
29 . A method as claimed in claim 18 involving applying a softening fluid to the mould prior to applying the mould to the film.
30 . A method as claimed in claim 18 wherein the dendrimer is a second or higher generation dendrimer.
31 . A method as claimed in claim 18 wherein the dendrimer contains a bisfluorene CORE.
32 . A method as claimed in claim 18 the layer of dendrimer has more than one dendrimer as active lasing components.
33 . A method as claimed in claim 18 wherein the dendrimer is processed from solution to form the film ready for patterning.Join the waitlist — get patent alerts
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