Semiconductor apparatus including a radiator for diffusing the heat generated therein

Abstract

A semiconductor apparatus is provided that includes a radiator for efficiently radiating heat generated in a wiring layer used in a surge current path of an electrostatic discharge protection circuit, and also for protecting the wiring layer itself used as the surge current path. The semiconductor apparatus includes an input protection circuit coupled to a wiring provided between an external terminal and an internal circuit, the input protection circuit includes a protection element for protecting the internal circuit from an excessive electrostatic surge input supplied to the external terminal. The semiconductor apparatus further includes a first metal wiring layer coupled to the input protection circuit and included in a current path for the surge electrostatic surge input, and a radiator including a sufficient thermal conductivity material coupled to the first metal wiring layer.

1 . A semiconductor apparatus, comprising:
 an input protection circuit coupled to a wiring provided between an external terminal and an internal circuit, the input protection circuit including a protection element for protecting the internal circuit from an excessive electrostatic surge input supplied to the external terminal;   a first metal wiring layer coupled to the input protection circuit, the first metal wiring layer included in a current path for the electrostatic surge input; and   a radiator coupled to the first metal wiring layer, the radiator being comprised of a sufficient thermal conductivity material.   
   
   
       2 . The semiconductor apparatus of  claim 1 , wherein the radiator is comprised of:
 a second metal wiring layer formed on the first metal wiring layer so as to have a structure of a plurality of hierarchical layers through respective interlayer insulating films; and   a plurality of via-metals having a structure of a plurality of hierarchical layers, each of the via-metals being formed in the plurality of interlayer insulating films, respectively, so as to connect an upper metal wiring layer to a lower metal wiring layer.   
   
   
       3 . The semiconductor apparatus of  claim 2 , wherein the second metal wiring layer having a structure of a plurality of hierarchical layers and a plurality of via-metals connected to the second metal wiring layer are characterized in that the number of the plurality of via-metals of a portion of the interlayer is different from the number of the plurality of via-metals of the remaining portion of the interlayer. 
   
   
       4 . The semiconductor apparatus of  claim 3 , wherein the second metal wiring layer having a structure of a plurality of hierarchical layers and a plurality of via-metals connected to it are located so as to avoid contacting a separate wiring position. 
   
   
       5 . The semiconductor apparatus of  claim 3 , wherein the plurality of via-metals of a portion of the interlayer are provided at shifted positions from an upper point of the first metal wiring layer. 
   
   
       6 . The semiconductor apparatus of  claim 1 , wherein the radiator includes a second metal wiring layer formed on the first metal wiring layer through an interlayer insulating film, and a plurality of via-metals are embedded in the interlayer insulating film so as to connect a second metal wiring layer to the first metal wiring layer. 
   
   
       7 . The semiconductor apparatus of  claim 1 , wherein the radiator includes a second metal wiring layer formed on the first metal wiring layer through interlayer insulating films so as to form a structure of a plurality of hierarchical layers, and via-metals, each being embedded in a plurality of the interlayer insulating films for connecting the second metal wiring layer to the first metal wiring layer, wherein at least one via-metal formed in the plurality of interlayer insulating films has a larger size than the remaining via-metals formed in the structure of a plurality of hierarchical layers. 
   
   
       8 . The semiconductor apparatus of  claim 1 , wherein the radiator includes a second metal wiring layer formed on the first metal wiring layer through interlayer insulating films, and via-metals, each being embedded in the interlayer insulating films for connecting the second metal wiring layer to the first metal wiring layer, wherein at least one of the via-metals has a larger size than the other via-metals in a structure of a plurality of hierarchical layers. 
   
   
       9 . The semiconductor apparatus of  claim 1 , wherein the radiator is embedded in an insulating layer. 
   
   
       10 . The semiconductor apparatus of  claim 1 , wherein a surface of a top metal wiring layer of the radiator is covered by a surface protection film, and a portion of the surface protection film corresponding to a position of an input pad area of the top metal wiring layer is removed. 
   
   
       11 . The semiconductor apparatus of  claim 1 , wherein the first metal wiring layer is coupled to a diffused layer of a semiconductor substrate by a contact. 
   
   
       12 . Semiconductor apparatus, comprising:
 an input protection circuit being connected to a wiring for connecting between an external terminal and an internal circuit, the input protection circuit including a protection element for protecting the internal circuit from an excessive electrostatic surge input supplied to the external terminal;   a first metal wiring layer being included in a surge current path for the input protection circuit and coupled to a diffused layer in a semiconductor substrate through a contact; and   a radiator comprised of a sufficient thermal conductivity material being formed on the first metal wiring layer through an interlayer insulating film.   
   
   
       13 . The semiconductor apparatus of  claim 12 , wherein the radiator includes at least one second metal wiring layer formed on the first metal wiring layer through a first interlayer insulating film. 
   
   
       14 . The semiconductor apparatus of  claim 13 , further comprising a top metal wiring layer formed on the second metal wiring layer through a second interlayer insulating film, the top metal wiring layer including an opening at a portion corresponding to a pad area, wherein the opening is covered by a surface protection film. 
   
   
       15 . The semiconductor apparatus of  claim 14 , further comprising via-metals embedded in the second interlayer insulating film in order to connect the second metal wiring layer to the top metal wiring layer.