Metal compound dots dielectric piece

Abstract

A dielectric piece includes an energy barrier layer and a plurality of crystalline metal compound dots distributed in the energy barrier layer. The material of the crystalline metal compound dots is different from that of the energy barrier layer. Due to its capability of retaining charges, the dielectric piece of the present invention meets the requirements of semiconductor devices in this and the next generation so as to be applied to complementary metal oxide semiconductors (CMOS), non-volatile memory devices, or capacitors as inter-gate dielectric layers, charge storage layers, or dielectric layers of capacitors.

1 . A dielectric piece, comprising:
 an energy barrier layer; and   a plurality of crystalline metal compound dots distributed in the energy barrier layer, with the material of the crystalline metal compound dots being different from that of the energy barrier layer.   
     
     
         2 . The dielectric piece of  claim 1 , wherein the crystalline metal compound dots comprises crystalline titanium oxide dots, crystalline zirconium oxide dots, or crystalline hafnium oxide dots. 
     
     
         3 . The dielectric piece of  claim 1 , wherein the crystalline metal compound dots are nano-dots. 
     
     
         4 . The dielectric piece of  claim 1 , wherein the material of the energy barrier layer is selected from a group consisting of Al 2 O 3 , Ta 2 O 5 , BaO, ZrO 2 , LaAlO 3 , La 2 O 3 , SrO, Y 2 O 3 , Si 3 N 4 , Si x N y , HfSiO x , ZrSiO x , MgO, SiO x  and SiO 2 , and the combinations thereof. 
     
     
         5 . The dielectric piece of  claim 1 , wherein the dielectric piece serves as a inter-gate dielectric layer, a charge storage layer or a dielectric material in a capacitor.