Apparatus and method for cleaning semiconductor substrates

Abstract

An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path.

1 . A method for cleaning semiconductor substrates by using a chamber including a cleaning room in which the substrates are cleaned and a drying room in which the substrates are dried, the method comprising the steps of:
 disposing the substrates in the cleaning room;   supplying a cleaning solution to the cleaning room to clean the substrates;   moving a supporter, in which the substrates are placed, to the drying room;   moving a separation plate, in which an exhaust path is formed, between the cleaning room and the drying room to separate the drying room from the cleaning room; and   supplying a drying fluid to the drying room to dry the substrates.   
   
   
       2 . The method of  claim 1 , wherein the step of drying the substrates comprises the steps of:
 draining the cleaning solution filling the cleaning room to the outside to decompress the inside of the drying room; and   exhausting the drying fluid supplied to the drying room from the drying room through the exhaust path formed in the separation plate.   
   
   
       3 . The method of  claim 2 , wherein the step of drying the substrates further comprises a step of exhausting the drying fluid flowing into the cleaning room through an exhaust port formed at the sidewall of the cleaning room while the cleaning solution is drained through a drainpipe of the cleaning room. 
   
   
       4 . The method of  claim 3 , wherein the step of drying the substrates further comprises the steps of:
 closing the exhaust port when the cleaning solution is completely drained from the cleaning room; and   exhausting the drying fluid flowing into the cleaning room through the drainpipe of the cleaning room.   
   
   
       5 . The method of  claim 4 , wherein the drainpipe is connected to the bottom of the cleaning room, and the drain of the cleaning solution from the cleaning room is achieved by gravity. 
   
   
       6 . The method of  claim 1 , wherein the step of drying the substrates comprises the steps of:
 supplying alcohol vapor onto the substrate; and   supplying a heated dry gas onto the substrate.   
   
   
       7 . The method of  claim 6 , wherein the alcohol vapor is isopropyl alcohol, and the dry gas is nitrogen gas.