Film-forming material and method for predicting film-forming material

Abstract

Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e −Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.

1 . A film-forming material having an evaporation rate V (%) represented by:
     V =( Ko/P )× e   −Ea/kT      (where Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature), wherein said film-forming material is identified by a value of said constant Ko and a value of said activation energy Ea.   
   
   
       2 . A film-forming material according to  claim 1 , wherein said activation energy Ea is obtained from a characteristic representing a material concentration in a carrier gas when the temperature T is changed in the state where the pressure P is constant, and said constant Ko is determined from a specific material concentration at a specific temperature. 
   
   
       3 . A film-forming material according to  claim 1  wherein said constant Ko is in a range of 5.700×10 14  (%·Torr) to 6.220×10 14  (%·Torr). 
   
   
       4 . A film-forming material according to  claim 1  wherein constant Ko is in a range of 2.600×10 11  (%·Torr) to 3.640×10 11  (%·Torr). 
   
   
       5 . A prediction method for predicting an unknown film-forming material, said prediction method comprising
 by obtaining, from a result of measurement of a material concentration in a carrier gas, an activation energy Ea in a formula:
     V =( Ko/P )× e   −Ea/kT    
   (where Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature) representing an evaporation rate V (%) of the unknown film-forming material, and further, calculating said constant Ko from a specific material concentration at a specific temperature, thereby predicting the unknown film-forming material from a value of said calculated constant Ko.   
   
   
       6 . A film-forming material comprising
 an activation energy Ea and a constant Ko satisfying a formula:
     V =( Ko/P )× e   −Ea/kT    
   (where Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature) representing an evaporation rate in terms of a concentration V (%) in an atmosphere,   wherein the temperature is set to 250° C. to 500° C., the concentration in the atmosphere is set to 0.1% to 10%, and the pressure is set to 10 −3  Torr or more.   
   
   
       7 . A film-forming material according to  claim 6 , wherein the temperature is set to 300° C. to 450° C. 
   
   
       8 . A film-forming material according to  claim 6  being evaporated and transported by a carrier gas. 
   
   
       9 . A film forming method for evaporating the film-forming material according to  claim 6  into a carrier gas at a concentration of 0.1% to 10% and transporting said carrier gas to the vicinity of a substrate, thereby forming a film of said film-forming material on said substrate. 
   
   
       10 . An analysis method for a film-forming material that is evaporated in evaporation means and transported to the vicinity of a substrate by a carrier gas so as to be formed into a film on said substrate, comprising:
 the method measuring a relationship between a pressure in said evaporation means and a concentration of said film-forming material in said carrier gas while a temperature for evaporating said film-forming material is kept constant;   making a first judgment as to whether or not x and y are substantially in a proportional relationship given that an inverse number of said pressure is x and said concentration is y;   measuring a relationship between said concentration and said temperature while the pressure in said evaporation means is kept constant;   making a second judgment as to whether or not a slope of a graph representing the relationship between said concentration and said temperature in an x-y plane is substantially constant regardless of said pressure given that an inverse number of said temperature is x and a logarithm of said concentration is y, and   when said first judgment and said second judgment are both positive, making a third judgment based on the fact that the concentration of said film-forming material in said carrier gas is represented by a formula:
     V =( Ko/P )× e   −Ea/kT    
   (where V is a concentration (%), Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature).   
   
   
       11 . An analysis method for a film-forming material that is evaporated in evaporation means and transported to the vicinity of a substrate by a carrier gas so as to be formed into a film on said substrate, wherein, given that a concentration of said film-forming material in said carrier gas is represented by a formula:
     V =( Ko/P )× e   −Ea/kT      (where V is a concentration (%), Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature), the third method comprising:   identifying Ea in said formula (I) from a relationship between the temperature for evaporating said film-forming material and said concentration while the pressure in said evaporation means is kept constant, and calculating Ko from a value of said Ea, the pressure in said evaporation means, and said concentration.   
   
   
       12 . A film forming method for evaporating a film-forming material in evaporation means and transporting said evaporated film-forming material to the vicinity of a substrate by a carrier gas, thereby forming a film on said substrate, said film forming method comprising:
 determining; given that a pressure in said evaporation means is P, a temperature for evaporating said film-forming material is T, and a concentration of said film-forming material in said carrier gas is V, a value of one of P, T, and V based on values of the other two and a formula:
     V =( Ko/P )× e   −Ea/kT    
   (where V is a concentration (%), Ko is a constant (%·Torr), P is a pressure (Torr), Ea is an activation energy (eV), k is a Boltzmann constant, and T is an absolute temperature).   
   
   
       13 . A film-forming material according to  claim 2  wherein said constant Ko is in a range of 5.700×10 14  (%·Torr) to 6.220×10 14  (%·Torr). 
   
   
       14 . A film-forming material according to  claim 2  wherein constant Ko is in a range of 2.600×10 11  (%·Torr) to 3.640×10 11  (%·Torr). 
   
   
       15 . A film-forming material according to  claim 7  being evaporated and transported by a carrier gas. 
   
   
       16 . A film forming method for evaporating the film-forming material according to  claim 7  into a carrier gas at a concentration of 0.1% to 10% and transporting said carrier gas to the vicinity of a substrate, thereby forming a film of said film-forming material on said substrate.