Apparatus and method for manufacturing semiconductor device incorporating fuse elements

Abstract

An apparatus and a method for manufacturing semiconductor devices is disclosed for selectively disconnecting a fuse element out of plural fuse elements formed on a semiconductor wafer substrate which is provided with the plural fuse elements and a dielectric layer having at least one opening corresponding to the location for the plural fuse elements. The method includes processing steps implemented onto the wafer substrate, such as (a) forming a layer of etching barrier resin by scanning at least one discharging nozzle for discharging the raw etching barrier resin while suitably discharging droplets of raw etching barrier resin to replenish the opening corresponding to the location of the fuse element not to be disconnected, (b) hardening the raw etching barrier resin to be a layer of etching barrier resin, and (c) the fuse element in the prescribed disconnecting area without overlying portion of the etching barrier resin layer is selectively disconnected by etching using the dielectric layer and the etching barrier resin as a mask.

1 .- 10 . (canceled) 
   
   
       11 . A semiconductor device, comprising:
 a plurality of fuse elements formed on a first surface of a semiconductor wafer substrate, wherein at least one of said plurality of fuse elements is selected for disconnection; and   a dielectric layer having at least one opening corresponding to a location for forming said at least one fuse element, wherein a layer of etching barrier resin is formed in an opening in said dielectric layer corresponding to a location of a fuse element not to be disconnected but not in a further opening corresponding to a location of a further fuse element selected to be disconnected.   
   
   
       12 . A semiconductor device, comprising:
 a dividing resistor component including at least two resistors having a resistive value, said dividing resistor component being capable of providing an output voltage by dividing an input voltage by said resistive value and of adjusting said output voltage by selectively disconnecting a fuse element in said semiconductor device, wherein a dielectric layer is formed having at least one opening corresponding to a location for forming at least one fuse element, and wherein   a layer of etching barrier resin is formed in an opening in said dielectric layer corresponding to a location of a fuse element that is not selectively disconnected out of said at least one fuse element, but not in a further opening corresponding to a location of a further fuse element selectively disconnected.   
   
   
       13 . A semiconductor device, comprising:
 a plurality of dividing resistors having a resistive value for supplying a divided voltage generated by dividing an input voltage by said resistive value;   a reference voltage generator for supplying a reference voltage; and   a comparator circuit for comparing said divided voltage with said reference voltage, wherein said plurality of dividing resistors include at least two resistors, which are capable of generating an output voltage by dividing an input voltage by said at least two resistors and adjusting said output voltage by disconnecting a fuse element in said semiconductor device.   
   
   
       14 . A semiconductor device, comprising:
 an output driver for controlling an output of an input voltage;   a plurality of dividing resistors having a resistive value for supplying a divided voltage by dividing an output voltage by said resistive value;   a reference voltage generator for supplying a reference voltage;   a comparator circuit for comparing said divided voltage with said reference voltage to control an operation of said output driver based on comparison results,   wherein said dividing resistors comprise a dividing resistor component, including at least two resistors, which are capable of providing an output voltage by dividing an input voltage by said at least two resistors and adjusting said output voltage by disconnecting a fuse element in said semiconductor device.   
   
   
       15 .- 20 . (canceled) 
   
   
       21 . A semiconductor device, comprising:
 a plurality of dividing resistors having a resistive value for supplying a divided voltage by dividing an input voltage by said resistive value;   reference voltage generator means for supplying a reference voltage; and   comparator circuit means for comparing said divided voltage with said reference voltage wherein said plurality of dividing resistors comprises a dividing resistor component, including at least two resistors, which is capable of providing an output voltage by dividing an input voltage by said at least two resistors and adjusting said output voltage by disconnecting a fuse element on the semiconductor device.   
   
   
       22 . A semiconductor device, comprising:
 output driver means for controlling an output of an input voltage;   a plurality of dividing resistors having a resistive value for supplying a divided voltage by dividing an output voltage by said resistive value;   reference voltage generator means for supplying a reference voltage;   comparator circuit means for comparing said divided voltage with said reference voltage to control an operation of said output driver means based on comparison results, wherein said plurality of dividing resistors comprise a dividing resistor component, including at least two resistors, which is capable of generating an output voltage by dividing an input voltage by said at least two resistors and adjusting said output voltage by disconnecting a fuse elements on the semiconductor device.   
   
   
       23 .- 28 . (canceled)