US2009101063A1PendingUtilityA1

Method of Manufacturing GaN Crystal Substrate

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Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Jan 21, 2004Filed: Dec 19, 2008Published: Apr 23, 2009
Est. expiryJan 21, 2024(expired)· nominal 20-yr term from priority
Inventors:Takuji Okahisa
H10P 58/00H10D 86/00C30B 25/02C30B 29/406
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Claims

Abstract

Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal ( 4 ) by a vapor growth technique onto a growth substrate ( 1 ), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal ( 4 ), pits ( 6 ) that define facet planes ( 5 F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits ( 6 ) be 20% or less.

Claims

exact text as granted — not AI-modified
1 . A method of growing GaN crystal onto a growth substrate by a vapor growth technique, the method comprising:
 a step of reacting GaCl with NH 3 , wherein the GaCl has a gas partial pressure ranging from 0.5 kPa to 4.0 kPa, and the NH 3  has a gas partial pressure ranging from 5.0 kPa to 50 kPa.   
   
   
       2 . The method of growing GaN crystal according to  claim 1 , wherein:
 the GaCl has a gas partial pressure ranging from 0.5 kPa to 2.0 kPa; and   the NH 3  has a gas partial pressure ranging from 5.0 kPa to 15 kPa.   
   
   
       3 . The method of growing GaN crystal according to  claim 1 , wherein:
 the GaCl has a gas partial pressure ranging from 0.5 k Pa to 2.0 kPa; and   the NH 3  has a gas partial pressure ranging from 5.0 kPa to 10 kPa.   
   
   
       4 . The method of growing GaN crystal according to  claim 1 , wherein:
 the GaCl has a gas partial pressure ranging from 0.5 kPa to 1.5 kPa; and   the NH 3  has a gas partial pressure ranging from 5.0 kPa to 10 kPa.   
   
   
       5 . The method of growing GaN crystal according to  claim 1 , wherein:
 the GaN crystal has a substrate acquisition rate of 83% or higher.   
   
   
       6 . The method of growing GaN crystal according to  claim 2 , wherein:
 the GaN crystal has a substrate acquisition rate of 83% or higher.   
   
   
       7 . The method of growing GaN crystal according to  claim 3 , wherein:
 the GaN crystal has a substrate acquisition rate of 83% or higher.   
   
   
       8 . The method of growing GaN crystal according to  claim 4 , wherein:
 the GaN crystal has a substrate acquisition rate of 83% or higher.   
   
   
       9 . The method of growing GaN crystal according to  claim 1 , wherein:
 the GaN crystal has a substrate acquisition rate ranging from 83 to 96%.   
   
   
       10 . The method of growing GaN crystal according to  claim 2 , wherein:
 the GaN crystal has a substrate acquisition rate ranging from 83 to 96%.   
   
   
       11 . The method of growing GaN crystal according to  claim 3 , wherein:
 the GaN crystal has a substrate acquisition rate ranging from 83 to 96%.   
   
   
       12 . The method of growing GaN crystal according to  claim 4 , wherein:
 the GaN crystal has a substrate acquisition rate ranging from 83 to 96%.

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