Field emission display (FED) and method of manufacture thereof

Abstract

A Field Emission Display (FED) and a method of manufacturing the FED are provided. The FED includes a substrate; a plurality of under-gate electrodes formed parallel to one another on a top surface of a substrate; a plurality of cathode electrodes formed perpendicular to the under-gate electrodes on an upper portion of the under-gate electrode, each of cathode holes being formed in portions of the cathode electrodes that intersect with the under-gate electrodes; a plurality of emitters formed symmetrical with respect to centers of the cathode holes on the cathode electrodes; and a plurality of gate electrodes formed to be electrically connected to the under-gate electrodes in central portions of the cathode holes.

1 - 27 . (canceled) 
     
     
         28 . A method of manufacturing a Field Emission Display (FED), the method comprising:
 forming a plurality of under-gate electrodes parallel to one another on a top surface of a substrate;   forming a first insulating layer, having first cavities through which a portion of the under-gate electrodes is exposed, on the top surface of the substrate;   forming a plurality of cathode electrodes, having cathode holes communicating with the first cavities, perpendicular to the under-gate electrodes on a top surface of the first insulating layer;   forming a second insulating layer, having second cavities communicating with the cathode holes, on top surfaces of the cathode electrodes;   forming a focusing electrode on a top surface of the second insulating layer;   forming a plurality of gate electrodes protruding from bottom central portions of the first cavities; and   forming a plurality of emitters symmetrical with centers of the gate electrodes on the cathode electrodes.   
     
     
         29 . The method of  claim 28 , wherein forming the under-gate electrodes comprises forming transparent electrodes. 
     
     
         30 . The method of  claim 28 , wherein forming the gate electrodes comprises:
 forming protrusions protruding from the bottom central portions of the first cavities; and   forming the gate electrodes on external surfaces of the protrusions.   
     
     
         31 . The method of  claim 30 , wherein the protrusions and the second insulating layer are simultaneously formed. 
     
     
         32 . The method of  claim 30 , wherein the gate electrodes and the focusing electrode are simultaneously formed. 
     
     
         33 . The method of  claim 28 , wherein forming the emitters comprises:
 forming a mask layer for backward exposure on top surfaces of the under-gate electrode before forming the first insulating layer, the mask layer patterned in a shape corresponding to the emitters;   coating an electron emission material on the cathode electrodes exposed through the second cavities; and   patterning the electron emission material with a backward exposure photolithography process using the mask layer for backward exposure as a photo-mask to form the emitters.   
     
     
         34 . The method of  claim 33 , wherein forming the mask layer for backward exposure comprises forming a layer of amorphous silicon or a metallic thin film. 
     
     
         35 . The method of  claim 33 , wherein the emitters are formed to have a ring shape along peripheries of the cathode holes. 
     
     
         36 . The method of  claim 28 , wherein the emitters are formed of at least one material selected from the group consisting of Carbon Nano-Tubes (CNTs), amorphous carbon, nano-diamonds, nano-metallic lines, and nano-oxidation metallic lines. 
     
     
         37 . A method of manufacturing a Field Emission Display (FED), the method comprising:
 forming a plurality of under-gate electrodes parallel to one another on a top surface of a substrate;   forming a first insulating layer, first cavities through which a portion of the under-gate electrodes is exposed, on the top surface of the substrate;   forming a plurality of cathode electrodes, having cathode holes communicating with the first cavities, perpendicular to the under-gate electrodes on a top surface of the first insulating layer;   forming a plurality of gate electrodes protruding from bottom central portions of the first cavities;   forming a second insulating layer, having second cavities communicating with the cathode holes, on top surfaces of the cathode electrodes;   forming a focusing electrode on a top surface of the second insulating layer; and   forming a plurality of emitters symmetrical with centers of the gate electrodes on the cathode electrodes.   
     
     
         38 . The method of  claim 37 , wherein forming the gate electrodes comprises:
 forming protrusions protruding from the bottom central portions of the first cavities; and   forming the gate electrodes on external surfaces of the protrusions.   
     
     
         39 . The method of  claim 38 , wherein the protrusions and the first insulating layer are simultaneously formed. 
     
     
         40 . The method of  claim 38 , wherein the gate electrodes and the cathode electrodes are simultaneously formed. 
     
     
         41 . The method of  claim 37 , wherein forming the emitters comprises:
 forming a mask layer for backward exposure on top surfaces of the under-gate electrode before forming the first insulating layer, the mask layer patterned in a shape corresponding to the emitters;   coating an electron emission material on the cathode electrodes exposed through the second cavities; and   patterning the electron emission material with a backward exposure photolithography process using the mask layer for backward exposure as a photo-mask to form the emitters.   
     
     
         42 . The method of  claim 41 , wherein forming the mask layer for backward exposure comprises forming a layer of amorphous silicon or a metallic thin film. 
     
     
         43 . The method of  claim 41 , wherein the emitters are formed to have a ring shape along peripheries of the cathode holes. 
     
     
         44 . A method of manufacturing a Field Emission Display (FED), the method comprising:
 forming a plurality of under-gate electrodes parallel to one another on a top surface of a substrate;   forming a first insulating layer, first cavities through which a portion of the under-gate electrodes is exposed, on the top surface of the substrate;   forming a plurality of cathode electrodes, having cathode holes communicating with the first cavities, perpendicular to the under-gate electrodes on a top surface of the first insulating layer;   forming a second insulating layer, having second cavities communicating with the cathode holes, on top surfaces of the cathode electrodes;   forming a focusing electrode on a top surface of the second insulating layer; and   forming a plurality of emitters symmetrical with centers of the gate electrodes on the cathode electrodes.   
     
     
         45 . The method of  claim 44 , wherein forming the emitters comprises:
 forming a mask layer for backward exposure on top surfaces of the under-gate electrode before forming the first insulating layer, the mask layer patterned in a shape corresponding to the emitters;   coating an electron emission material on the cathode electrodes exposed through the second cavities; and   patterning the electron emission material with a backward exposure photolithography process using the mask layer for backward exposure as a photo-mask to form the emitters.   
     
     
         46 . The method of  claim 45 , wherein forming the mask layer for backward exposure comprises forming a layer of amorphous silicon or a metallic thin film. 
     
     
         47 . The method of  claim 45 , wherein the emitters are formed to have a ring shape along peripheries of the cathode holes.