Solar cell and method for manufacturing the same

Abstract

It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.

1 - 9 . (canceled) 
   
   
       10 . A method of manufacturing a solar cell that comprises a first electrode layer, a second electrode layer, and a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and that generates a photoelectromotive force due to light that is incident from the second electrode layer side, the method comprising:
 (i) a step of forming the first electrode layer and the p-type semiconductor layer on a substrate in that order;   (ii) a step of forming a layer A so that the p-type semiconductor layer is sandwiched between the layer A and the first electrode layer; and   (iii) a step of forming the second electrode layer so that the layer A is sandwiched between the first electrode layer and the second electrode layer;   wherein the layer A is a layer that comprises Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga.   
   
   
       11 . The method of manufacturing a solar cell according to  claim 10 , wherein the step (ii) is carried out by sputtering. 
   
   
       12 . The method of manufacturing a solar cell according to  claim 10 , further comprising:
 after the step (ii), a step of thermally processing the layer A that is formed.   
   
   
       13 . The method of manufacturing a solar cell according to  claim 12 , wherein a temperature of the thermal processing is in a range of 100° C. to 300° C. 
   
   
       14 . The method of manufacturing a solar cell according to  claim 10 , further comprising:
 between the step (i) and the step (ii),   (a) a step of forming an n-type semiconductor layer on the p-type semiconductor layer.   
   
   
       15 . The method of manufacturing a solar cell according to  claim 10 , wherein the p-type semiconductor layer is a compound semiconductor that comprises at least one element selected from Cu, In, and Ga, and at least one element selected from Se and S.