Cleaning method of apparatus for depositing metal containing film

Abstract

Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.

1 . A cleaning method of an apparatus for depositing a metal containing film using an MO (metal organic) source, the method comprising
 simultaneously supplying a fluorine (F)-containing gas and a carbon (C)-eliminating gas to a reactor and cleaning an inside of the reactor without a pause of the apparatus.   
   
   
       2 . The cleaning method of  claim 1 , wherein the gases are plasmatized using a remote plasma and are supplied to the reactor. 
   
   
       3 . The cleaning method of  claim 1 , wherein the gases are supplied to the reactor in the state where direct plasma is generated in the reactor and are plasmatized. 
   
   
       4 . The cleaning method of  claim 1 , wherein the fluorine (F)-containing gas is one selected from the group consisting of NF 3 , C 2 F 6 , CF 4 , CHF 3 , and a combination thereof. 
   
   
       5 . The cleaning method of  claim 1 , wherein the carbon (C)-eliminating gas is an oxygen (O)-containing gas or hydrogen (H)-containing gas. 
   
   
       6 . The cleaning method of  claim 1 , wherein the carbon (C)-eliminating gas is one selected from the group consisting of O 2 , N 2 O, O 3 , NH 3 , H 2 , and a combination thereof. 
   
   
       7 . A cleaning method of an apparatus for depositing a metal containing film using an MO (metal organic) source, the method comprising
 supplying a fluorine (F)-containing gas and a carbon (C)-eliminating gas to a reactor and cleaning an inside of the reactor without a pause of the apparatus,   wherein the cleaning of the inside of the reactor repeats a gas supply cycle more than once, the gas supply cycle comprising:   supplying the carbon (C)-eliminating gas to the reactor;   stopping supply of the carbon (C)-eliminating gas;   supplying the fluorine (F)-containing gas to the reactor; and   stopping supply of the fluorine (F)-containing gas.   
   
   
       8 . The cleaning method of any one of  claims 1  through  7 , wherein the metal containing film is one of TaN and TaCN, the fluorine (F)-containing gas is NF 3  and the carbon (C)-eliminating gas is H 2 .