Diffusion barrier layer and method for manufacturing a diffusion barrier layer

Abstract

A diffusion barrier system for a display device comprising a layer system with at least two layers of dielectric material, wherein at least two adjacent layers of that layer system comprise the same material. A respective method for manufacturing such a diffusion barrier system in a single process chamber of a plasma deposition system has the steps of introducing a substrate to be treated in said process chamber, discretely varying in a controlled manner during deposition at least one process parameter in the process chamber, without completely interrupting such process parameter, which results in layers with different properties and finally unloading said substrate from said process.

1 . Method for manufacturing a diffusion barrier or encapsulation layer system comprising layers of dielectric material, in a single process chamber of a plasma deposition system with the following steps:
 (1) Introducing a substrate to be treated in said process chamber   (2) Discretely varying in a controlled manner during deposition at least one of the process parameters in the process chamber gas flow, power, pressure, temperature without completely interrupting such process parameter, such that each variation results in a layer with different properties   (3) unloading said substrate from said process chamber.   
     
     
         2 . Method according to  claim 1 , wherein the temperature is kept at a value between 80° C. and 175° C. 
     
     
         3 . Method according to  claim 1 , wherein as a result of varying the at least one of the process parameters in step (2) above, a diffusion barrier or encapsulation layer system is deposited over said substrate, said layer system comprising a plurality of dielectric material layers, with at least two adjacent layers of that layer system comprising the same material, said dielectric material being one of a nitride, oxide, carbide and oxynitride and combinations thereof of a metal or a semiconductor, wherein said layer system comprises at least four layers exhibiting a water vapor transition rate of or less than 5.66×10 −4  g/m2/day at 20° C. and 50% humidity.